Parameter Calculation and Simulation of a Vacuum Ion Beam Treatment System

Introduction. Determination of the physical and geometric properties of plasma is a relevant problem in the field of   ion-plasma processes for micro- and nanoelectronics fabrication. The energy of ions and the nature of their interaction with materials define the effectiveness of ion-plasma technologies. The penetration depth and momentum transfer of ions affect the sputtering yield (Y) of the material, which is a key parameter in ion beam technologies. Changes in the ion beam shape have an effect on the ion density distribution. Previous studies have explored the possibility of modifying the design of the ion source to achieve annular or near-Gaussian beam profiles; however, this approach is associated with significant labor and monetary costs. An alternative approach consists in the use of external magnetic systems. Aim. Determination of the physical parameters of a system for ion beam treatment of micro- and nanoelectronic substrates and functional layers. Materials and methods. The research was conducted at the MT-11 Department of Bauman Moscow State Technical University (BMSTU) using the MVTU-11-1MC vacuum system. The material under investigation was silicon and argon ions. Cross-sectional analysis was performed using a CROSSBEAM 550 microscope. The magnetic field strength was determined using a TP2-2U milliteslameter. Results. Calculations and experimental investigations revealed the minimum sputtering yield (Y) to be 0.03 at oms/ion at an energy of 0.05 keV, with the maximum of 1.35 atoms/ion at 7 keV. Subsequently, the sputtering yield decreases to 1.05 atoms/ion at 250 keV due to ion implantation into the lattice structure. The external magnetic system of the source allows the beam cone angle to be modified, which increases the ion concentration at a specific point on the substrate, consequently enhancing the process efficiency. Conclusion. A methodology for calculating the energy of Ar⁺ ions generated by an annular ion source during Si substrate etching has been validated. Processing of the experimental results enabled the determination of the sputtering yield (Y). The derived expression for the magnetic field strength and magnetic field distribution will be used when simulating an additional external magnetic system designed to manipulate the ion beam shape.

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