X-Ray Lithography for Nanoscale Image Formation

Introduction. Issues associated with group methods for fabricating protective masks on substrates in high-resolution projection X-ray lithography are discussed.
Aim. To study the lithographic characteristics of X-ray resists and the specific features of their application under various operating modes.
Materials and methods. Studies were conducted using an RSM-500 X-ray spectrometer-monochromator. Absorption coefficient measurements were performed on monochromatic X-ray lines in the wavelength range of 5…50 Å. Film thickness was monitored using an MII-4 interference microscope.
Results. Spectral dependencies of the absorption coefficients in the soft X-ray range (5…50 Å) were obtained. At certain wavelengths, a sharp increase in the absorption coefficient was observed. Absorption jumps were detected at wavelengths of 23 and 43 Å. This phenomenon is associated with the fact that the X-ray photon energy becomes sufficient to ionize electrons from specific atomic energy levels of the absorbing material. It was shown that the X-ray absorption coefficient increases with increasing wavelength. Between the absorption jumps, the coefficient can be approximated by a smooth function over certain wavelength intervals. Analytical approximations of the obtained dependencies in the form of power-law functions were proposed. A comparison of the experimental data with the calculated values showed satisfactory agreement.
Conclusion. A technique for measuring the spectral dependences of X-ray resist absorption coefficients was developed. Soft X-ray absorption coefficients were experimentally obtained.

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