Modeling Asymmetric Shift in the Threshold Voltage of MOS Structures under Thermal Field Treatment

O. V. Aleksandrov; N. N. Morozov

Journal of the Russian Universities. Radioelectronics
Izvestiya Vysshikh Uchebnykh Zavedenii Rossii. Radioelektronika

ISSN 1993-8985 (Print)
ISSN 2658-4794 (Online)

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Journal of the Russian Universities. Radioelectronics

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Aleksandrov O.V., Morozov N.N. Modeling Asymmetric Shift in the Threshold Voltage of MOS Structures under Thermal Field Treatment. Journal of the Russian Universities. Radioelectronics. 2025;28(2):69-79. (In Russ.) https://doi.org/10.32603/1993-8985-2025-28-2-69-79

This work is licensed under a Creative Commons Attribution 4.0 License.

ISSN 1993-8985 (Print)
ISSN 2658-4794 (Online)

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About the Authors

O. V. Aleksandrov
Saint Petersburg Electrotechnical University
Russian Federation

Oleg V. Aleksandrov, Dr Sci. (Phys.-Math.) (2003), Professor (2008) of the Department of Electronic Instrumentation

5 F, Professor Popov St., St Petersburg 197022

N. N. Morozov
Saint Petersburg Electrotechnical University
Russian Federation

Nikita N. Morozov, Master's degree in Electronics and Nanoelectronics (2022), Postgraduate student and assistant of the Department of Electronic Instrumentation

5 F, Professor Popov St., St Petersburg 197022

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Journal of the Russian Universities. Radioelectronics

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