Investigation of temperature dependent current-voltage characteristics of Ba0.5Sr0.5TiO3 thin films
Abstract
The Ba0.5Sr0.5TiO3 (BST) thin films were deposited via radio frequency cathode sputtering on sapphire (α-Al2O3) and gadolinium gallium garnet (GGG) substrates. The effect of substrate material on the leakage current and mechanism of conductivity in BST stacks has been studied by tempera-ture dependent (300…400 K) current-voltage characteristics. Lower leakage currents of BST/α-Al2O3 thin films were achieved compared with that of BST/GGG thin films, especially in the high field re-gion. The conduction mechanism of the deposited films is found to be of Schottky emission type for a wide range of applied fields on both substrates. Schottky barrier height, effective Richardson con-stant, effective mass of conduction electrons in dielectric, and dynamic dielectric constant within the bounds of thermionic emission theory were found.
About the Authors
P. Y. Belyavskiy
Saint Petersburg Electrotechnical University "LETI"
Russian Federation
Russian Federation
V. V. Plotnikov
ITMO University
Russian Federation
Russian Federation
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Review
For citations:
Belyavskiy P.Y., Plotnikov V.V. Investigation of temperature dependent current-voltage characteristics of Ba0.5Sr0.5TiO3 thin films. Journal of the Russian Universities. Radioelectronics. 2016;(1):38-43. (In Russ.)
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