The Monitoring of Structural Quality of Silicon-Sapphire Interface by the Surface Photovoltage Method
Abstract
Heteroepitaxial silicon-on-sapphire (SOS) wafers with a layer thickness of 200 and 600 nm were fabricated by the vapor phase epitaxy with monosilane as a precursor. The assessment of structural quality of silicon-sapphire interface was carried out by the surface photovoltage method (SPV) and X-ray reflectometry. Technological parameters of the manufacturing process that affecting to the amount of SPV signal were determined via SOS quality monitoring. We conclude that deposition temperature and the growth rate are most important process parameters in this cause. It was found that SPV method can be used as monitoring method of SOS fabrication process, because SPV signals are correlated with Xray reflectometry results. Probably, SPV method allowed to evaluate the structural and electrophysical parameters of silicon- sapphire interface. SOS device performances as function of SPV signal were determined. The leakage current of test pchannel MOS transistor in the closed state was on 2-16 nA when SPV signal higher than 450 mV and the leakage current was approximately 4 nA when SPV signal lower than 450 mV.
About the Authors
S. D. Fedotov
National Research University of Electronic Technology
Russian Federation
Russian Federation
Dipl.-engineer on "Chemical technology of single crystals, materials and electronic devices" (2014, Dmitry Mendeleev University of Chemical Technology of Russia), postgraduate student of National Research University of Electronic Technology. Research engineer in Laboratory of analysis and development of technologies of EPIEL JSC (Moscow, Zelenograd). The author of 20 scientific publications. Area of expertise: epitaxy of silicon on dielectric substrates; development of the formation processes of SOI, heteroepitaxial structures of silicon on sapphire (SOS), intended for the manufacture of radiation hardened circuits, microwave devices and strain gauges; the processes of forming wafers for power electronics
S. P. Timoshenkov
National Research University of Electronic Technology
Russian Federation
Russian Federation
D.Sc. in Engineering (2004), Professor (2007), the chief of the Department of of Microelectronics of National Research University of Electronic Technology. Laureate of the Russian Federation Government award (2007). The author of 180 scientific publications. Area of expertise: study of physic- chemical processes of splicing and the formation of multi- layered, complex structures for microelectronics and Microsystem technology, the formation of silicon on insulator (SOI), development of technology of manufacture and Assembly of a MEMS sensor
E. M. Sokolov
Epiel JSC
Russian Federation
Russian Federation
Dipl.-engineer on chemistry (1975, Moscow State University), leading researcher of the EPIEL JSC (Moscow, Zelenograd). The author of more than 90 scientific publications. Area of expertise: semiconductor materials science, in particular, the technology of creation of structures of various types based on silicon and its compounds, intended for the manufacture of devices and integrated circuits
V. N. Statsenko
Epiel JSC
Russian Federation
Russian Federation
Dipl.-engineer (1981, Moscow Institute of Electronic Technology (MIET)), CEO of EPIEL JSC (Moscow, Zelenograd). The author of more than 40 scientific publications. Area of expertise: conducting epitaxial processes; homo- and heteroepitaxy semiconductor compounds, including compounds "semiconductor on insulator"; rapid thermal processes
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Review
For citations:
Fedotov S.D., Timoshenkov S.P., Sokolov E.M., Statsenko V.N. The Monitoring of Structural Quality of Silicon-Sapphire Interface by the Surface Photovoltage Method. Journal of the Russian Universities. Radioelectronics. 2017;(5):28-35. (In Russ.)
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