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Technique of the X-Parameters Measurements of S-Band Power Amplifier

Abstract

Performed a series of the X-parameters measurements of high-power S-band power amplifier. This method is the foundation to provide similar measurements and as result to obtain the behavioral model of power amplifier to further simulations in ADS. This method describes all the calibration and measurement steps to obtain X-parameters.

About the Authors

O. A. Adonev
JSC "All-Russian Scientific research Institute of Radio Engineering"
Russian Federation


D. V. Kotov
JSC "All-Russian Scientific research Institute of Radio Engineering"
Russian Federation


A. V. Pluteshko
JSC "All-Russian Scientific research Institute of Radio Engineering"
Russian Federation


A. A. Blinnikov
JSC "All-Russian Scientific research Institute of Radio Engineering"
Russian Federation


A. V. Zaycev
"Akmetron"(Moscow)
Russian Federation


P. V. Maslov
"Akmetron"(Moscow)
Russian Federation


References

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2. Device Modeling with NVNAs and X-parameters / D. E. Root, J. Xu, J. Horn, M. Iwamoto, G. Simpson // IEEE MTT-S INMMiC Conf., 26-27 April 2010, Gοtenborg, Sweden. Piscataway: IEEE, 2010. P. 12-15.

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5. IVCAD Advanced Measurement and Modeling Software. URL: https://www.maurymw.com/MW_RF /IVCAD _Advanced_Measurement_Modeling_Software.php (дата обращения: 28.10.16).

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7. Modeling a UMS GaN Transistor (CHZ015A) with a B1505, a PNA-X and ICCAP. URL: http://www.keysight.com /upload/cmc_upload/All/gan_transistor.pdf (дата обращения 28.10.2016).


Review

For citations:


Adonev O.A., Kotov D.V., Pluteshko A.V., Blinnikov A.A., Zaycev A.V., Maslov P.V. Technique of the X-Parameters Measurements of S-Band Power Amplifier. Journal of the Russian Universities. Radioelectronics. 2016;(5):69-72. (In Russ.)

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ISSN 1993-8985 (Print)
ISSN 2658-4794 (Online)