Preview

Journal of the Russian Universities. Radioelectronics

Advanced search

Switches Based on Phase-Change Material

https://doi.org/10.32603/1993-8985-2026-29-4-84-98

Abstract

Introduction. High-frequency channel switches based on phase-change materials (PCM) may soon become a new, accessible switch technology. Several research laboratories are reportedly close to bringing such devices to the market. These switches show promise in a number of quality metrics and continue to improve.
Aim. To review PCM-based switches, their potential for commercial implementation, and achievable parameters.
Materials and methods. The research methodology was based on a review and comparative analysis of existing switch technologies, their physical operating principles, and characteristics. The study systematizes data from scientific publications on PCM, switch designs based on these materials, control methods, and their electrophysical models. The research is theoretical and analytical in nature and is primarily based on literature sources published over the past 10 years.
Results. The operating principle, design features, applicable materials, equivalent circuits, and achievable parameters of PCM-based switches are discussed. Their advantages and disadvantages are formulated.
Conclusion. PCM-based switches have the potential to become an alternative to the currently dominant semiconductor solutions. They offer favorable FOMs, competitive isolation and insertion loss levels, compact dimensions, and straightforward integration with CMOS technology. The results presented in the literature demonstrate a high level of technological maturity of PCM-based switches for commercial implementation. Their main limitations at present are limited endurance and long switching times. Nevertheless, further structural optimization will increase the endurance and improve the quality metrics of such devices, which may lead to the emergence of a new class of switches on the market.

About the Authors

E. M. Torina
LLC "Radiokomp"; National Research University "Moscow Power Engineering Institute"
Russian Federation

Elena M. Torina, Cand. Sci. (Eng.) (2016), Associate Professor (2026), Associate Professor of the Department of Radio Signal Generation and Processing; Senior Researcher

14, Krasnokazarmennaya St., Moscow 111250



V. N. Kochemasov
LLC "Radiokomp"
Russian Federation

Victor N. Kochemasov, Cand. Sci. (Eng.) (1976), General Director

42, Volgogradsky Ave., Moscow 109316



A. R. Safin
National Research University "Moscow Power Engineering Institute"; Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences
Russian Federation

Ansar R. Safin, Dr Sci. (Phys.-Math.) (2024), Associate Professor, Professor of RAS, Professor of the Depart-ment of Formation and Processing of Radio Signals; Deputy Director for Research

14, Krasnokazarmennaya St., Moscow 111250



References

1. Moon J.-S., Seo H.-Ch., Le D., Fung H. H., Schmitz A., Oh T. C., Kim S., Son K.-A., Zehnder D., Yang B. 11 THz Figure-of-Merit Phase-Change RF Switches for Reconfigurable Wireless Front-Ends. IEEE MTT-S Intern. Microwave Symp., Phoenix, USA, 17–22 May 2015. IEEE, 2015, pp. 1–4. doi: 10.1109/MWSYM.2015.7167005

2. Kim D., Yang S. J., Wainstein N., Skrzypczak S., Ducournau G., Pallecchi E., Happy H., Yalon E., Kim M., Akinwande D. Emerging Memory Electronics for Non- Volatile Radiofrequency Switching Technologies. Nature Reviews Electrical Engineering. 2024, vol. 1, no. 1, pp. 10–23. doi: 10.1038/s44287-023-00001-w

3. Torina E. M., Kochemasov V. N., Safin A. R. Transistors for Solid-State Microwave Switches (Review). J. of the Russian Universities. Radioelectronics. 2023, vol. 26, no. 3, pp. 6–31. (In Russ.)

4. Torina E. M., Kochemasov V. N., Safin A. R. Switching PIN Diodes. Microwave Electronics. 2021, no. 4, pp. 10–18. (In Russ.)

5. Kochemasov V., Torina E., Safin A. MEMS Switches for RF/Microwave Signals. Electronics: Science, Technology, Business. 2024, iss. 4–6, pp. 76–84; 86–96; 88–97. (In Russ.)

6. Shim Y., Hummel G., Rais-Zadeh M. RF Switches Using Phase Change Materials. IEEE 26th Intern. Conf. on Micro Electro Mechanical Systems, Taipei, Taiwan, 20–24 Jan. 2013. IEEE, 2013, pp. 237–240. doi: 10.1109/MEMSYS.2013.6474221

7. El-Hinnawy N., Borodulin P., Wagner B., King M. R., Mason J. S., Jones E. B., Veliadis V., Howell R. S., Young R. M., Lee M. J. A 7.3 THz Cut-Off Frequency, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater For Thermal Actuation. IEEE Compound Semiconductor Integrated Circuit Symp., Monterey, USA, 13–16 Oct. 2013. IEEE, 2013, pp. 1–4. doi: 10.1109/CSICS.2013.6659195

8. El-Hinnawy N., Slovin G., Rose J., Howard D. A 25 THz FCO (6.3 fs Ron·Coff) Phase-Change Material RF Switch Fabricated in a High Volume Manufacturing Environment with Demonstrated Cycling > 1 Billion Times. 2020 IEEE/MTT-S Intern. Microwave Symp., Los Angeles, USA, 04–06 Aug. 2020. IEEE, 2020, pp. 45–48. doi: 10.1109/IMS30576.2020.9223973

9. Bogoslovskiy N. A., Tsendin K. D. Physics of Switching and Memory Effects in Chalcogenide Glassy Semiconductors. Semiconductors. 2012, vol. 46, pp. 577–608. doi: 10.1134/S1063782612050065

10. Bakan G. Electrothermal Characterization of Phase-Change Films and Devices. Anadolu University J. of Science and Technology A-Applied Sciences and Engineering. 2017, vol. 18, no. 5, pp. 1057–1065. doi: 10.18038/aubtda.304357

11. Blondy P., Nadaud K., Crunteanu A., Mennai A. Innovative Switching Technologies for Future Tunable Wireless Communications Systems. IEEE Solid-State Sensors, Actuators and Microsystems Workshop (Hilton Head), June 2016, Hilton Head Island, SC, pp. 1–4. doi: 10.31438/trf.hh2016.1

12. Nandy T., Anwar F., Coutu Jr R. A. Germanium Telluride: A Chalcogenide Phase Change Material with Many Possibilities. Phase Change Materials- Technology and Applications. London, IntechOpen, 2022, pp. 1–14. doi: 10.5772/intechopen.108461

13. Tolkach N., Vishnyakov N. V., Lazarenko P. I., Sherchenkov A. A., Sudakova A. U., Nazimov D. R. Optical Switching in Multilayer Structures Based on Ge2Sb2Te5. J. of Physics. 2020, vol. 1695, art. no. 012075. doi: 10.1088/1742-6596/1695/1/012075

14. Vishnyakov N. V., Vikhrov S. P., Tolkach N. M. Comprehensive Local Diagnostics of a Thin-Film GST Structure with Phase Transitions. J. Radioengineering. 2019, vol. 83, no. 11 (18), pp. 80–87. (In Russ.) doi: 10.18127/j00338486-201911(18)-11

15. El-Hinnawy N., Borodulin P., Wagner B., King M. R., Jones E. B., Howell R. S., Lee M. J., Young R. M. Low-Loss Latching Microwave Switch Using Thermally Pulsed Non-Volatile Chalcogenide Phase Change Materials. Appl. Physics Let. 2014, vol. 105, art. no. 013501. doi: 10.1063/1.4885388

16. Wang M., Lin F., Rais-Zadeh M. Comparison and Analysis of Structures of GeTe Based Phase Change RF Switches and Modeling for Power Handling Capability. GOMACTech 2015: Government Microcircuit Applications & Critical Technology Conf., St Louis, MO, USA, 23–26 March 2015, 4 p.

17. Wang M., Rais-Zadeh M. Development and Evaluation of Germanium Telluride Phase Change Material Based Ohmic Switches for RF Applications. J. of Micromechanics and Microengineering. 2016, vol. 27, no. 1, art. no. 013001. doi: 10.1088/0960-1317/27/1/013001

18. Singh T., Mansour R. R. Monolithic PCM Based Miniaturized T-type RF Switch for Millimeter Wave Redundancy Switch Matrix Applications. IEEE MTT-S Intern. Microwave Symp., Boston, USA, 02–07 June 2019. IEEE, 2019, pp. 658–660. doi: 10.1109/MWSYM.2019.8700946

19. Singh T., Mansour R. R. Miniaturized DC–60 GHz RF PCM GeTe-Based Monolithically Integrated Redundancy Switch Matrix Using T-Type Switching Unit Cells. IEEE Trans. on Microwave Theory and Techniques. 2019, vol. 67, no. 12, pp. 5181–5190. doi: 10.1109/TMTT.2019.2944359

20. Singh T., Mansour R. R. Ultra-Compact Phase-Change GeTe-Based Scalable mmWave Latching Crossbar Switch Matrices. IEEE Trans. on Microwave Theory and Techniques. 2021, vol. 70, no. 1, pp. 938–949. doi: 10.1109/TMTT.2021.3128589

21. Leon A., Reig B., Perret E., Podevin F., Saint-Patrice D., Puyal V., Lugo-Alvarez J., Ferrari P. RF Pow er-Handling Performance for Direct Actuation of Germanium Telluride Switches. IEEE Trans. on Microwave Theory and Techniques. 2020, vol. 68, no. 1, pp. 60–73. doi: 10.1109/TMTT.2019.2946145


Review

For citations:


Torina E.M., Kochemasov V.N., Safin A.R. Switches Based on Phase-Change Material. Journal of the Russian Universities. Radioelectronics. 2026;29(4):84-98. (In Russ.) https://doi.org/10.32603/1993-8985-2026-29-4-84-98

Views: 4

JATS XML


Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.


ISSN 1993-8985 (Print)
ISSN 2658-4794 (Online)