For citations:
Afanasev A.V., Afanasev P.V., Ilyin V.A., Serkov A.V., Trushlyakova V.V., Chigirev D.A., Shevchenko S.A., Voskolovich A., Pologov S.A. Electrical Characterization of Power Silicon Carbide MOSFETs with Linear and Hexagonal Base Cell Designs. Journal of the Russian Universities. Radioelectronics. 2025;28(5):54-65. (In Russ.) https://doi.org/10.32603/1993-8985-2025-28-5-54-65



























