Transistors for Solid-State Microwave Switches (A Review)
https://doi.org/10.32603/1993-8985-2023-26-3-6-31
Abstract
Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The desire to improve the parameters of switches has led to the emergence of devices based on various technologies. In order to elucidate the current trends and future prospects in the field of switch technologies, semiconductor devices that form the basis of switch circuits should be considered.
Aim. To review transistor types used in solid-state switches.
Materials and methods. The search and selection of literature sources for review was based on the chronological principle. The search depth for considering the parameters of finished components was no more than 10 years, for considering technologies and structural solutions – more than 10 years. This choice was explained by our desire to trace the history of development and approaches to the creation of semiconductor devices that have led to the emergence of the modern component base. The final array of sources comprised scientific publications presenting factual information on the objects under consideration.
Results. The types, structures, materials, characteristics and manufacturing technologies of transistors used in switches are considered. The achievable parameters of the switches based on the considered devices are presented.
Conclusion. The choice of a particular transistor type for switches depends on the requirements for the parameters and performance characteristics of the final device. At present, transistor solutions for switches are dominated by field-effect transistors (FETs) of various types: GaAs and GaN transistors with a high electron mobility (HEMT) and Si CMOS FETs implemented by standard as well as silicon-on-insulator and silicon-on-sapphire technologies. The conducted literature review has revealed prospects for the development of technologies based on BiCMOS heterojunction bipolar transistors.
Supporting agencies: RSF grant no. 21-79-10396
About the Authors
Elena M. Torina
"Radiocomp";
National Research University "MPEI"
Russian Federation
Russian Federation
Elena M. Torina, Cand. Sci. (Eng.) (2016), Associate Professor of the Department of Radio Signal Generation and Processing of NRU "MPEI"
14, Krasnokazarmennaya St., Moscow 111250;
Senior Researcher of Radiocomp LLC.
The author of more than 20 scientific pa pers. Area of expertise: radiophysics and electronics; radio signals oscillators.
Victor N. Kochemasov
"Radiocomp"
Russian Federation
Russian Federation
Victor N. Kochemasov, Cand. Sci. (Eng.) (1976), General Director of Radiocomp LLC
42, Volgogradsky Ave., Moscow 109316.
Author of over 150 scientific papers, including four monographs and over forty copyright certificates for inventions. Area of expertise: radio engineering; devices for the generation and processing of radio signals; microwave filters; synthesizers of frequencies and signals.
Ansar R. Safin
"Radiocomp";
National Research University "MPEI";
Kotel'nikov Institute of Radioengineering and Electronics RAS
Russian Federation
Russian Federation
Ansar R. Safin, Cand. Sci. (Eng.) (2014), Head of the Department of Radio Signal Generation and Processing, NRU "MPEI"
14, Krasnokazarmennaya St., Moscow 111250;
Senior Researcher at the Institute of Radio Technologies and Electronics of the Russian Academy of Science n. a. V. A. Kotelnikov;
Head of the Department of Radiocomp LLC.
The author of more than 50 scientific papers. Area of expertise: radiophysics and electronics; physics of magnetic phenomena; spintronics.
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Review
For citations:
Torina E.M., Kochemasov V.N., Safin A.R. Transistors for Solid-State Microwave Switches (A Review). Journal of the Russian Universities. Radioelectronics. 2023;26(3):6-31. (In Russ.) https://doi.org/10.32603/1993-8985-2023-26-3-6-31
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