Nonlinear Inertial Diode Model Considering the Dependence of Nonequilibrium Charge Carrier Lifetime on Direct Current to Improve Simulation of Radioelectronic Equipment
https://doi.org/10.32603/1993-8985-2022-25-6-70-78
Abstract
Introduction. Adequate modeling of semiconductor devices with a p–n-junction in reverse bias represents a relevant research problem. The existing quasistatic and non-quasistatic models fail to provide a satisfactory description for the dependence of nonequilibrium charge carrier lifetime on current density. This leads to significant simulation errors (tens of percent) at pulsed broadband signals. Simulation errors arise, because the existing models regard the lifetime as a constant value.
Aim. To propose and investigate an equivalent circuit of a p–n-junction considering the dependence of the lifetime of nonequilibrium charge carriers on direct current, with the possibility of its simple integration into CAD.
Materials and methods. The study was carried out on the example of a fast recovery silicon diode BAS16J with a p–n-junction manufactured by Nexperia. A modified diode model is proposed in the form of an equivalent circuit that considers the dependence of the lifetime of nonequilibrium charge carriers on the direct current of the p–njunction at high injection levels.
Results. The discrepancy between the experimental and simulated curves did not exceed ±9 % under pulsed diode operation. The extraction of parameters in the proposed model is carried out conventionally, from the current-voltage and capacitance-voltage characteristics of the diode.
Conclusion. The proposed non-quasistatic equivalent diode circuit can be used when designing radio electronic devices operated at short-pulse broadband signals. The proposed diode model can be easily implemented in modern CAD systems at the user level.
Supporting agencies: The work was carried out within the state assignment of the Ministry of Science and Higher Education of the Russian Federation (the project no. FWRM-2021-0015).
About the Authors
G. M. Shevchenko
Institute of High Current Electronics SB RAS; Tomsk State University of Control Systems and Radioelectronics
Russian Federation
Russian Federation
Gleb M. Shevchenko, Junior Researcher at the Laboratory of Nonlinear Video-Pulse Location of the Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences; Postgraduate Student of the Tomsk State University of Control Systems and Radioelectronics
2/3, Akademichesky Ave., Tomsk 634055
E. V. Semyonov
Institute of High Current Electronics SB RAS; Tomsk State University of Control Systems and Radioelectronics
Russian Federation
Russian Federation
Edward V. Semyonov, Dr Sci. (Eng.) (2012), Associate Professor (2009), Senior Researcher of Institute of High Current Electronics SB RAS; Professor at the Department of Radioelectronics and Communication Systems of Tomsk State University of Control Systems and Radioelectronics
2/3, Akademichesky Ave., Tomsk 634055
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Review
For citations:
Shevchenko G.M., Semyonov E.V. Nonlinear Inertial Diode Model Considering the Dependence of Nonequilibrium Charge Carrier Lifetime on Direct Current to Improve Simulation of Radioelectronic Equipment. Journal of the Russian Universities. Radioelectronics. 2022;25(6):70-78. (In Russ.) https://doi.org/10.32603/1993-8985-2022-25-6-70-78
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