Plasma Enhanced Chemical Vapor Deposited Materials and Organic Semiconductors in Photovoltaic Devices
https://doi.org/10.32603/1993-8985-2020-23-4-38-47
Abstract
Introduction. PECVD enables fabrication of wide range of advanced materials with various structure such as amorphous, polymorphous, nano-crystalline, nanostructured, microcrystalline etc. and with various electronic properties. The latter can be also changed by different dopingl. PECVD silicon materials are commercially employed in multi-layered PV structures (including ones on flexible substrates). Combining these materials with crystalline silicon active substrate resulted in significant improvement of PCE in hetero junction technology PV structures. Existence of new organic semiconductors (OS) together with understanding of physical properties resulted in fast development of OC PV devices
Aim. To consider both PECVD and OS materials and to present description of fabrication, structure and electronic properties for device application.
Materials and methods. Devices based on non-crystalline materials, devices based on OS, hybrid devices. PECVD and Spin coating technique was used to deposit materials with tunable properties enabling device engineering possibilities.
Results. PECVD and OS materials were analyzed. These materials have different levels of characterization (data volume, interpretation of the results etc.) and of understanding of physics determining device performance. Some examples of these materials in PV including structures with crystalline silicon were considered.
Conclusion. Important advantage of both PECVD and OS materials is that fabrication methods are compatible and allow fabrication of great variety of hybrid device structures on crystalline semiconductors. Advantages of such devices are difficult to predict because of lack of data in scientific literature. However a new area in material science and related devices for further exploring and exploiting has appeared.
Keywords
PECVD materials,
plasma deposition,
organic semiconductors,
photovoltaic devices,
hybrid photovoltaic devices
Supporting agencies: The authors would like greatly appreciate Dr.Y.Kudriavtsev (CINVESTV, Mexico) for many years of collaboration in application of advanced SIMS techniques to study non-crytalline materials, We would like to thank our PhD students Hiram Martinez (Electronics department of INAOE), Antonio J. Olivares-Vargas (Optics department of INAOE) for their dedication to work with both PECVD and organic semiconductors for PV devices and possibility to use their data, also many thanks to engineer Adrian Itzmoyotl for his technical service during fabrication of materials and devices.
About the Authors
A. Kosarev
National Institute for Astrophysics, Optics and Electronics (INAOE)
Mexico
Andrey Kosarev, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielectrics" (1978), Professor Researcher at National Institute for Astrophysics, Optics and Electronics Dept., Puebla, 42840, Mexico
Mexico
Andrey Kosarev, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielectrics" (1978), Professor Researcher at National Institute for Astrophysics, Optics and Electronics Dept., Puebla, 42840, Mexico
I. Cosme
CONACyT-INAOE
Mexico
Ismael Cosme, PhD from INAOE in 2013, Associated researcher, Optics and Electronics Dept., Puebla, 42840, Mexico
Mexico
Ismael Cosme, PhD from INAOE in 2013, Associated researcher, Optics and Electronics Dept., Puebla, 42840, Mexico
S. Mansurova
National Institute for Astrophysics, Optics and Electronics (INAOE)
Mexico
Svetlana Mansurova, PhD from National Institute for Astrophysics, Optics and Electronics (Mexico) in 1998. Titular Researcher, Optics and Electronics Dept., Puebla, 42840, Mexico
Mexico
Svetlana Mansurova, PhD from National Institute for Astrophysics, Optics and Electronics (Mexico) in 1998. Titular Researcher, Optics and Electronics Dept., Puebla, 42840, Mexico
D. Andronikov
R&D Center of Thin Film Technologies in Energetics LLC, (RDC TFTE); Ioffe Physics and technical Institute
Russian Federation
Dmitriy Andronikov, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielectrics" (2013), 28 Polytechnicheskaya St., 194064, St Petersburg, Russia
Russian Federation
Dmitriy Andronikov, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielectrics" (2013), 28 Polytechnicheskaya St., 194064, St Petersburg, Russia
A. Abramov
R&D Center of Thin Film Technologies in Energetics LLC, (RDC TFTE); Ioffe Physics and technical Institute
Russian Federation
Alexey Abramov, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielec-trics» (2001), 28 Polytechnicheskaya St., 194064, St Petersburg, Russia
Russian Federation
Alexey Abramov, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielec-trics» (2001), 28 Polytechnicheskaya St., 194064, St Petersburg, Russia
I. Shakhray
Saint Petersburg Electrotechnical University "LETI"; Hevel LLC
Russian Federation
Igor Shakhray, CEO from Hevel LLC, Doctorant, 429950, Novocheboksarsk, Russia
Russian Federation
Igor Shakhray, CEO from Hevel LLC, Doctorant, 429950, Novocheboksarsk, Russia
Eu. Terukov
R&D Center of Thin Film Technologies in Energetics LLC, (RDC TFTE); Ioffe Physics and technical Institute; Hevel LLC
Russian Federation
Eugeny Terukov, Dr. Sci. (Eng.) in Technical Sciences in the specialty of "Semiconductors and Dielectrics" (1996), Professor, Head of laboratory, 26 Polytechnicheskaya St., 194021, St Petersburg, Russia
Russian Federation
Eugeny Terukov, Dr. Sci. (Eng.) in Technical Sciences in the specialty of "Semiconductors and Dielectrics" (1996), Professor, Head of laboratory, 26 Polytechnicheskaya St., 194021, St Petersburg, Russia
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Review
For citations:
Kosarev A., Cosme I., Mansurova S., Andronikov D., Abramov A., Shakhray I., Terukov E. Plasma Enhanced Chemical Vapor Deposited Materials and Organic Semiconductors in Photovoltaic Devices. Journal of the Russian Universities. Radioelectronics. 2020;23(4):38-47. https://doi.org/10.32603/1993-8985-2020-23-4-38-47
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