Wideband Waveguide-to-Microstrip Transition for mm-Wave Applications

Introduction. Increased data rate in modern communication systems can be achieved by raising the operational frequency to millimeter wave range where wide transmission bands are available. In millimeter wave communication systems, the passive components of the antenna feeding system, which are based on hollow metal waveguides, and active elements of the radiofrequency circuit, which have an interface constructed on planar printed circuit boards (PCB) are interconnected using waveguide-to-microstrip transition.

Aim. To design and investigate a high-performance wideband and low loss waveguide-to-microstrip transition dedicated to the 60 GHz frequency range applications that can provide effective transmission of signals between the active components of the radiofrequency circuit and the passive components of the antenna feeding system

Materials and methods. Full-wave electromagnetic simulations in the CST Microwave Studio software were used to estimate the impact of the substrate material and metal foil on the characteristics of printed structures and to calculate the waveguide-to-microstrip transition characteristics. The results were confirmed via experimental investigation of fabricated wideband transition samples using a vector network analyzer

Results. The probe-type transition consist of a PCB fixed between a standard WR-15 waveguide and a back-short with a simple structure and the same cross-section. The proposed transition also includes two through-holes on the PCB in the center of the transition area on either side of the probe. A significant part of the lossy PCB dielectric is removed from that area, thus providing wideband and low-loss performance of the transition without any additional matching elements. The design of the transition was adapted for implementation on the PCBs made of two popular dielectric materials RO4350B and RT/Duroid 5880. The results of full-wave simulation and experimental investigation of the designed waveguide to microstrip transition are presented. The transmission bandwidth for reflection coefficient S11 < –10 dB is in excess of 50…70 GHz. The measured insertion loss for a single transition is 0.4 and 0.7 dB relatively for transitions based on RO4350B and RT/Duroid 5880.

Conclusion. The proposed method of insertion loss reduction in the waveguide-to-microstrip transition provides effective operation due to reduction of the dielectric substrate portion in the transition region for various high-frequency PCB materials. The designed waveguide-to -microstrip transition can be considered as an effective solution for interconnection between the waveguide and microstrip elements of the various millimeter-wave devices dedicated for the 60 GHz frequency range applications.

1. Boccardi F., Heath R. W., Lozano A., Marzetta T. L., Popovski P. Five Disruptive Technology Directions for 5G. IEEE Communications Magazine. 2014, vol. 52, iss. 2, pp. 74–80. doi: 10.1109/MCOM.2014.6736746

2. 802.11-2016. IEEE Standard for Information technology – Telecommunications and information exchange between systems Local and metropolitan area networks – Specific requirements – Pt 11: Wireless LAN Medium Access Control (MAC) and Physical Layer (PHY) Specifications. doi: 10.1109/IEEESTD.2016.7786995

3. Rappaport T. S., Sun S., Mayzus R., Zhao H., Azar Y., Wang K., Wong G. N., Schulz J. K., Samimi M., Gutierrez F. Millimeter Wave Mobile Communications for 5G Cellular: It Will Work! IEEE Access (Invited). 2013, vol. 1, pp. 335–349. doi: 10.1109/ACCESS.2013.2260813

4. Decision of the State Committee for Emergencies of 12.12.2011 no. 11-13-06-1. On the Use by RadioElectronic Means of the Fixed Service of the Radio Frequency Band 57–64 GHz. Available at: http://grfc.ru/upload/medialibrary/713/Reshenie_GKRCH_ot_10.03.2017_17_40_03_15.02.2019.docx (accessed: 29.09.2019)

5. ETSI EN 302 217-3 V2.2.1 (2014-04): Harmonized European Standard. Available at: https://www.etsi.org/deliver/etsi_en/302200_302299/30221703/02.02.01_60/en_30221703v020201p.pdf (accessed: 29.09.2019)

6. Revision of Part 15 of the Commission’s Rules Regarding Operation in the 57–64 GHz Band. Available at: http://fjallfoss.fcc.gov/edocs_public/attachmatch/FCC-13-112A1.pdf (accessed: 29.09.2019)

7. Stevens M., Grafton G. The Benefits of 60 GHz Unlisensed Wireless Communications. 10 p. Available at: https://www.faltmann.de/pdf/white-paper-benefits-of60ghz.pdf (accessed: 15.02.2019)

8. Bogdanov Yu., Kochemasov V., Khas'yanova E. Foil Dielectrics – How to Choose the Best Option for RF / Microwave Circuit Boards. Pechatnyi montazh [Printed Wiring]. 2013, no. 3, pp. 142–147. (In Russ.)

9. Felbecker R., Keusgen W., Peter M. Estimation of Permittivity and Loss Tangent of High Frequency Materials in the Millimeter Wave Band Using a Hemispherical Open Resonator. IEEE Intern. Conf. on Microwaves, Communications, Antennas and Electronics Systems (COMCAS 2011). Tel Aviv, Israel, 7–9 Nov. 2011, pp. 1–8. doi: 10.1109/COMCAS.2011.6105829

10. Liew E., Okubo T.-A., Sudo T., Hosoi T., Tsuyoshi H., Kuwako F. Signal Transmission Loss Due to Copper Surface Roughness in High-Frequency Region. IPC APEX EXPO 2014. Las Vegas, 25–27 March 2014. Available at: http://www.circuitinsight.com/pdf/signal_transmission_loss_copper_surface_roughness_ipc.pdf (accessed: 29.09.2019)

11. Artemenko A., Maltsev A., Maslennikov R., Sevastyanov A., Ssorin V. Design of Wideband Waveguide to Microstrip Transition for 60 GHz Frequency Band. Proc. of 41st European Microwave Conference (EuMC), Manchester (UK), 10–13 Oct. 2011, pp. 838–841.

12. Ishikawa Y., Sakakibara K., Suzuki Y., Kikuma N. Millimeter-Wave Topside Waveguide-to-Microstrip Transition in Multilayer Substrate. IEEE Microwave and Wireless Components Letters. 2018, vol. 28, iss. 5, pp. 380–382. doi: 10.1109/LMWC.2018.2812125

13. Kook J. L., Dong H. L., Rieh J.-S., Kim M. A V-band Waveguide Transition Design Appropriate for Monolithic Integration. Proc. of Asia-Pacific Microwave Conf. (APMC). Bangkok, Thailand, 11–14 Dec. 2007, pp. 1–4. doi: 10.1109/APMC.2007.4554756

14. Kim J., Choe W., Jeong J. Submillimeter-Wave Waveguide-to-Microstrip Transitions for Wide Circuits/Wafers. IEEE Trans. on Terahertz Science and Technology. 2017, vol. 7, iss. 4, pp. 440–445. doi: 10.1109/TTHZ.2017.2701151

15. Kaneda N., Qian Y., Itoh T. A Broad-Band Microstripto-Waveguide Transition Using Quasi-Yagi Antenna. IEEE Trans. on Microwave Theory and Techniques. 1999, vol. 47, iss. 12, pp. 2562–2567. doi: 10.1109/22.809007

16. Aliakbarian H., Enayati A., Yousefbeigi M., Shahabadi M. Low-Radiation-Loss Waveguide-to-Microstrip Transition Using a Double Slit Configuration for Mi-crostrip Array Feeding. Asia-Pacific Microwave Conf. Bangkok, Thailand, 11–14 Dec. 2007. Piscataway, IEEE, 2007, pp. 737–740. doi: 10.1109/APMC.2007.4554952

17. Aliakbarian H., Enayati A., Yousefbeigi M., Shahabadi M. Low-Radiation-Loss Waveguide-to-Microstrip Transition Using a Double Slit Configuration for Microstrip Array Feeding. Asia-Pacific Microwave Conf. Bangkok, Thailand, 11–14 Dec. 2007. doi: 10.1109/APMC.2007.4554952

18. Zhou Y., Liu H., Li E., Guo G., Yang T. Design of a Wideband Transition from Double-Ridge Waveguide to Microstrip Line. Intern. Conf. on Microwave and Millimeter Wave Technology. Chengdu, China, 8–11 May 2010. Piscataway, IEEE, 2010. doi: 10.1109/icmmt.2010.5525049

19. Mozharovskiy A., Artemenko A., Ssorin V., Maslennikov R., Sevastyanov A. Wideband Tapered Antipodal Fin-Line Waveguide-to-Microstrip Transition for E-band Applications. Proc. of 43st Europ. Microwave Conf. (EuMC). Nuremberg, Germany, 6–10 Oct. 2013. In 3 Vols, vol. 3, pp. 1187–1190.

20. Zhang C. W. A Novel W-Band Waveguide-ToMicrostrip Antipodal Finline Transition. IEEE Intern. Conf. on Applied Superconductivity and Electromagnetic Devices. Beijing, China, 25–27 Oct. 2013, pp. 166–168. doi: 10.1109/ASEMD.2013.6780735

21. Mozharovskiy A., Artemenko A., Sevastyanov A., Ssorin V., Maslennikov R. Beam-Steerable Integrated Lens Antenna with Waveguide Feeding System for 71-76/81-86 GHz point-to-point Applications. 10th Europ. Conf. on Antennas and Propagation (EuCAP). Davos, Switzerland, 10–15 April 2016. doi: 10.1109/EuCAP.2016.7481774

22. Sakakibara K., Hirono M., Kikuma N., Hirayama H. Broadband and Planar Microstrip-to-Waveguide Transitions in Millimeter-Wave Band. Intern. Conf. on Microwave and Millimeter Wave Technology. Nanjing, China, 21–24 April 2008, Piscataway, IEEE, 2008. doi: 10.1109/ICMMT.2008.4540667

23. Sakakibara K., Hirono M., Kikuma N., Hirayama H. Broadband and Planar Microstrip-To-Waveguide Transitions in Millimeter-Wave Band. Intern. Conf. on Microwave and Millimeter Wave Technology. Nanjing, China, 21–24 April 2008. doi: 10.1109/ICMMT.2008.4540667

24. Tikhov Y., Moon J.-W., Kim Y.-J., Sinelnikov Y. Refined Characterization of E-Plane Waveguide to Microstrip Transition for Millimeter-Wave Applications. Asia-Pacific Microwave Conf. Sydney, NSW, Australia, 3–6 Dec. 2000, pp. 1187–1190. doi: 10.1109/APMC.2000.926043

25. Soykin O., Artemenko A., Ssorin V., Mozharovskiy A., Maslennikov R. Wideband Probe-Type Waveguide-toMicrostrip Transition for V-band Applications. Proc. of 46th Europ. Microwave Conf. (EuMC). London, UK, 4–6 Oct. 2016, pp. 1–4. doi: 10.1109/EuMC.2016.7824262

26. Shireen R., Shi S., Prather D. W. W-Band Microstripto-Waveguide Transition Using Via Fences. Progress In Electromagnetics Research Letters. 2010, vol. 16, pp. 151–160.

27. Tahara Y., Ohno A., Oh-hashi H. , Makino S., Ono M., Ohba T. A Novel Microstrip-to-Waveguide Transition Using Electromagnetic Bandgap Structures. Proc. of Intern. Symp. on Antennas and Propagation (ISAP), 2005, pp. 459–462.

28. Pat. US 6 967 542 B2. Int. Cl. H01P 5/107; H01P 5/10; H01P 005/107 (2006.01). Weinstein M. E. Microstrip-Waveguide Transition. Publ. 2005/11/22.

29. Soikin O. V., Ssorin V. N., Mozharovskii A. V., Artemenko A. A., Maslennikov R. O. Waveguide Microstrip Junction. Pat. RF 2 600 506 С1. H01P 5/107 (2006.01). Publ. 20.10.2016. Bul. 29. (In Russ.)