PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD
https://doi.org/10.32603/1993-8985-2018-21-5-51-59
Abstract
The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered. The addition of electrodes to the surface of the i-region makes it possible to regulate the concentration of electrons and holes within the larger limits in compare with the single-gate structure creating enriched and depleted are-as in the structure. Programming is carried out by applying the appropriate voltage to the control electrodes of the floating gates. It is shown that the charge generated on the floating gate changes characteristics of the i-region of the pin diode.
The key elements of complex simulation of the two-gate pin diode are simulation of charge accumulation mechanism on the floating gate, simulation of pin-diode opening time and calibration of numerical model. Simulation is performed in Synopsys Sentaurus TCAD. Physical models describing traps and their parameters, particle tunneling, transport phenomena in dielectrics and amorphous films are used in simulation. As a result of modeling, the opening time dependences on size, floating gate location and floating gate charge magnitude are obtained.
It is shown that the pin-diode 2-gate structures allow to change the opening time in a wider range than the single-gate ones. To program a large range of pin-diode opening times, it is 2 gate structure that is advisable to use. The obtained results indicate that it is possible to implement a two-bit programming pin-diode and expand its functionality.
About the Authors
Alexander A. Danilenko
Saint Petersburg Electrotechnical University "LETI"
Russian Federation
Russian Federation
Alexander A. Danilenko – Bachelor’s Degree in Electronics and Nanoelectronics (2018), Master’s Degree Student of Saint Petersburg Electrotechnical University "LETI". The author of 1 scientific publications. Area of expertise: simulation of microelectronics devices in the Synopsys Sentaurus TCAD environment.
5, Professor Popov Str., 197376, St. Petersburg, Russia
Anton V. Strygin
Saint Petersburg Electrotechnical University "LETI"
Russian Federation
Russian Federation
Anton V. Strygin – Bachelor’s Degree in Electronics and Nanoelectronics (2018), Master’s Degree Student of Saint Petersburg Electrotechnical University "LETI". The author of 1 scientific publications. Area of expertise: simulation of microelectronics devices in the Synopsys Sentaurus TCAD environment.
5, Professor Popov Str., 197376, St. Petersburg, Russia
Nikolay I. Mikhailov
Saint Petersburg Electrotechnical University "LETI"
Russian Federation
Russian Federation
Nikolai I. Mikhailov – Ph.D. in Physics and Mathematics (1982), Assotiate Professor (1985) of the Department of Physical Electronics and Technology of Saint Petersburg Electrotechnical University "LETI". The author of more than 25 scientific publications. Area of expertise: mathematical and computer simulation of semiconductor devices.
5, Professor Popov Str., 197376, St. Petersburg, Russia
Vadim V. Perepelovsky
Saint Petersburg Electrotechnical University "LETI"
Russian Federation
Russian Federation
Vadim V. Perepelovsky – Ph.D. in Physics and Mathematics (1992), Assotiate Professor (1995) of the Department of Physical Electronics and Technology of Saint Petersburg Electrotechnical University "LETI". The author of more than 30 scientific publications. Area of expertise: simulation of solid-state electronics devices.
5, Professor Popov Str., 197376, St. Petersburg, Russia
Yaroslav N. Panichev
JSC "Morion"
Russian Federation
Russian Federation
Yaroslav N. Panichev – Master’s Degree in Physical Electronics (2016) of Saint Petersburg Electrotechnical University "LETI". Quartz resonator production engineer in JSC "Morion". The author of 4 scientific publications. Area of expertise: simulation of solid-state electronics devices.
13A, KIM Pr., 199155, St. Petersburg, Russia
Vladislav V. Marochkin
Pixpolar Oy
Finland
Finland
Vladislav V. Marochkin – Ph.D. in Physics and Mathematics (2016, Finland), Project Manager for Pixpolar Oy. The author 10 scientific publications. Area of expertise: simulation of solid-state electronics devices.
10, Metallimiehenkuja, c/o Regus Kora, 02150, Espoo, Finland
Vladimir L. Ivanov
ITMO University
Russian Federation
Russian Federation
Vladimir L. Ivanov – Ph.D. in Engineering (1988), Senior Researcher (1991), Associate Professor of the Department of Thermal Physics and Theoretical Foundations of Thermal Engineering of ITMO University The author of more than 50 scientific publications. Area of expertise: modeling of objects and control systems; energy-saving technologies.
9, Lomonosova Str., 191002, St. Petersburg, Russia
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Review
For citations:
Danilenko A.A., Strygin A.V., Mikhailov N.I., Perepelovsky V.V., Panichev Ya.N., Marochkin V.V., Ivanov V.L. PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD. Journal of the Russian Universities. Radioelectronics. 2018;(5):51-59. (In Russ.) https://doi.org/10.32603/1993-8985-2018-21-5-51-59
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