EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
https://doi.org/10.32603/1993-8985-2018-21-5-44-50
Abstract
The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors. As the experimental techniques, the electrochemical capacitance-voltage (ECV) profiling and other methods of admittance spectroscopy are applied. Modernization of commercial ECV-profiling setup allows observing for the first time the concentration peak from a near-surface delta-layer of pHEMT heterostructures together with the enrichment peak from the quantum well. In order to optimize the etching speed the crater bottom control is performed by means of AFM. The electrolyte-semiconductor contact capacitance is measured with Agilent RLC-meter. The main theoretical technique used in the research is numerical modeling of nanoheterostructure key electronic features by self-consistent solution of Schrödinger and Poisson equations. The potential line-up for the conduction band bottom is obtained, and the quantized energy levels are calculated. The complex analysis of series of samples is carried out in order to understand the influence of delta-layer position on the level depth and at the carrier concentration. The optimum distance between QW and delta-layer providing the most efficient charge carrier delivery to quantum well is found. The performed research is aimed at improvement of microwave electronic devices allowing increase of the gain coefficient and the transfer characteristic of SHF-transistors.
About the Authors
Yana V. Ivanova
Saint Petersburg Electrotechnical University "LETI"
Russian Federation
Russian Federation
Yana V. Ivanova – Master’s Degree in Techniques and Technology in Electronics and Micro-Electronics (2012), postgraduate student of the Department of micro- and nanoelectronics of Saint Petersburg Electrotechnical University "LETI". The author of two scientific publication. Area of expertise: physics of semiconductor; computer modeling; numerical methods in researches.
5, Professor Popov Str., 197376, St. Petersburg, Russia
George E. Yakovlev
Saint Petersburg Electrotechnical University "LETI"
Russian Federation
Russian Federation
George E. Yakovlev – Master’s Degree of Techniques and Technology in Electronics and Nano-Electronics (2014), postgraduate student of the Department of micro- and nanoelectronics of Saint Petersburg Electrotechnical University "LETI". The author of 30 scientific publication. Area of expertise: physics of semiconductor; diagnostics of nanoheterostructures, computer modeling.
5, Professor Popov Str., 197376, St. Petersburg, Russia
Vasily I. Zubkov
Saint Petersburg Electrotechnical University "LETI"
Russian Federation
Russian Federation
Vasily I. Zubkov – D.Sc. in Physics and Mathematics (2008), Professor (2018) of the Department of Micro- and nanoelectronics of Saint Petersburg Electrotechnical University "LETI". Chief Researcher of JSC "NRI "Electron". The author of more than 150 scientific publications. Area of expertise: physics of semiconductor; nanoelectronics; admittance spectroscopy; diagnostics of nanoheterostructures; computer modeling.
5, Professor Popov Str., 197376, St. Petersburg, Russia
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Review
For citations:
Ivanova Ya.V., Yakovlev G.E., Zubkov V.I. EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES. Journal of the Russian Universities. Radioelectronics. 2018;(5):44-50. (In Russ.) https://doi.org/10.32603/1993-8985-2018-21-5-44-50
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