Optimization of an Operation Mode of the Solid-State Image Sensor in a Short-Wave Infrared Region
Abstract
Increase in quantum efficiency of silicon image sensor in the short-wave infrared range 900…1100 nm is shown theoretically and confirmed experimentally in case of temperature increase of a crystal. This increase is caused by reduction of width of the forbidden band of silicon in case of temperature increase of a crystal from +50 °C to +130 °C. The experimental study of the dark currents showed that for CMOS-sensors of Sony their value anomally small up to temperature of +130 °C. Thus, optimization of temperature of a crystal of the image sensor by criterion of the relation signal/noise is possible. It is set that in case of temperature increase of a crystal to +80 °…+120 °C the relation signal/noise by operation on wavelength of 1064 nanometers increases in 2 … 3 times.
About the Author
D. A. Belous
Saint Petersburg State Electrotechnical university "LETI"
Russian Federation
Bachelor of technique and technology for the Radio technology (2015) direction, the engineer of department of Radio-electronic means
Russian Federation
Bachelor of technique and technology for the Radio technology (2015) direction, the engineer of department of Radio-electronic means
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Review
For citations:
Belous D.A. Optimization of an Operation Mode of the Solid-State Image Sensor in a Short-Wave Infrared Region. Journal of the Russian Universities. Radioelectronics. 2017;(3):60-65. (In Russ.)
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