Study of Parameters Affecting Breakdown Voltage of Bipolar Static Induction Transistor
Abstract
The article considers structural and technological parameters affecting breakdown voltage of a BSIT transistor cell. The main objective of the scientific research in that field is optimization of manufacturing techniques of power electronics transistor configurations in order to improve the instrument output characteristics and reliability. One of the key electrical parameters characterizing this instrument is breakdown voltage. In p-n junction at specific value of reverse bias the breakdown effect is present that appears as sharp increase of reverse current in p-n junction. For thermal breakdown to occur the thermal self-heating of the structure is necessary. It takes place in case of considerable reverse current in p-n junction. Typically, thermal breakdown happens after tunnel or avalanche breakdown of p-n junction. Breakdown voltage of real diffused p-n junction is defined by value of avalanche breakdown voltage of spherical part of the junction. Thus, breakdown voltage of p-n of junction strongly depends on its geometry.
Keywords
About the Authors
T. A. Ismailov
Dagestan State Technical University
Russian Federation
D.Sc. in Engineering (1992), Professor (1994), Chancellor, Honored Scientist of the RF
Russian Federation
D.Sc. in Engineering (1992), Professor (1994), Chancellor, Honored Scientist of the RF
A. R. Shakhmaeva
Dagestan State Technical University
Russian Federation
Ph.D. in Engineering (2010), Associate Professor of the Department of Management and Information Technologies in Engineering Systems Computer Engineering, Dean of the Advanced Training and Professional Retraining Faculty
Russian Federation
Ph.D. in Engineering (2010), Associate Professor of the Department of Management and Information Technologies in Engineering Systems Computer Engineering, Dean of the Advanced Training and Professional Retraining Faculty
B. A. Shangereeva
Dagestan State Technical University
Russian Federation
Ph.D. in Engineering (2010), Associate Professor of the Department of Theoretical and General Electrical Engineering
Russian Federation
Ph.D. in Engineering (2010), Associate Professor of the Department of Theoretical and General Electrical Engineering
References
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Review
For citations:
Ismailov T.A., Shakhmaeva A.R., Shangereeva B.A. Study of Parameters Affecting Breakdown Voltage of Bipolar Static Induction Transistor. Journal of the Russian Universities. Radioelectronics. 2017;(2):23-27. (In Russ.)
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