Ka-band GaAs pHEMT Wideband Power Amplifier MMICs

Introduction. Ka-band power amplifier MMICs are essential components of many electronic systems. Their application area covers radar, 5G communication, and test equipment. The design of a reliable power amplifier with high-performance characteristics is a challenging task.

Aim. Design of two types millimeter-wave wideband power amplifier (PA) MMICs by using 0.13 µm GaAs pseudomorphic high-electron mobility transistor (pHEMT) technology process.

Materials and methods. A cell unit measuring 8 × _{50 μ}m was used in the design of both amplifiers. The first PA MMIC included three stages, with the overall gate periphery of the third stage being 0.8 mm. The second PA MMIC was realized as a parallel combining of the first PA structure, using Wilkinson combiners. The two types of MMICs were fabricated through 0.13 _μm GaAs pHEMT technology, realized at the Istok NPP. RF testing was carried out both on wafer and in assembly to measure S parameters and power characteristics under CW test conditions and different ambient temperature.

Results. The first PA MMIC demonstrates a saturated output power of more than 25.5 dBm with an associated PAE above 19 % in the 26…38 GHz frequency band. The saturated output power of the second PA MMIC exceeds 28.4 dBm with more than 19 % PAE over the 26…38 GHz band. The circuits show a gain of 17.5 and 17 dB for the first and second PA MMICs, respectively.

Conclusion. Two types of millimeter-wave wideband PA MMICs were fabricated using 0.13 _μm GaAs pHEMT technology. The designed PA MMICs represent devices with a wideband small-signal and power performance, which makes them suitable for wideband wireless communication, radar, and test equipment applications.

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