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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">radioelectronics</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений России. Радиоэлектроника</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of the Russian Universities. Radioelectronics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1993-8985</issn><issn pub-type="epub">2658-4794</issn><publisher><publisher-name>Saint Petersburg Electrotechnical University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32603/1993-8985-2025-28-2-57-68</article-id><article-id custom-type="elpub" pub-id-type="custom">radioelectronics-995</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МИКРО- И НАНОЭЛЕКТРОНИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICRO- AND NANOELECTRONICS</subject></subj-group></article-categories><title-group><article-title>Влияние размеров зерен на температурный гистерезис керамического титаната бария</article-title><trans-title-group xml:lang="en"><trans-title>Effect of Grain Sizes on Temperature Hysteresis of Ceramic Barium Titanate</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-3084-3394</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мыльников</surname><given-names>И. Л.</given-names></name><name name-style="western" xml:lang="en"><surname>Mylnikov</surname><given-names>I. L.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Мыльников Иван Леонидович – магистр по направлению "Электроника и наноэлектроника" (2013), ассистент кафедры физики</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Ivan L. Mylnikov, Master in Electronics and Nanoelectronics (2013), Assistant of the Department of Physics</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">mylnikov.il@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-9001-7599</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Сошников</surname><given-names>И. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Soshnikov</surname><given-names>I. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Сошников Илья Петрович – кандидат физико-математических наук (1997), ведущий научный сотрудник</p><p>ул. Хлопина, д. 8, к. 3, Санкт-Петербург, 194021</p></bio><bio xml:lang="en"><p>Ilya P. Soshnikov, Cand. Sci. (Eng.) (1997), Leading Researcher</p><p>8, Khlopina St., St Petersburg 194021</p></bio><email xlink:type="simple">ipsosh@beam.ioffe.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-7360-1267</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Дедык</surname><given-names>А. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Dedyk</surname><given-names>A. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Дедык Антонина Ивановна – кандидат физико-математических наук (1986), доцент кафедры физики</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Antonina I. Dedyk, Cand. Sci. (Eng.) (1986), Associate Professor of the Department of Physics</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">dedyk_ai@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0001-7261-1551</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Павлова</surname><given-names>Ю. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Pavlova</surname><given-names>Yu. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Павлова Юлия Валерьевна – кандидат технических наук (2008), доцент кафедры физики</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Yuliya V. Pavlova, Cand. Sci. (Eng.) (2008), Associate Professor of the Department of Physics</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">yulia.pavlova@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-0499-4159</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Анохин</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Anokhin</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Анохин Александр Сергеевич – кандидат технических наук (2022), инженер образовательного центра "Энергоэффективные инженерные системы"</p><p>Кронверкский пр., д. 49 А, Санкт-Петербург, 197101</p></bio><bio xml:lang="en"><p>Alexander S. Anokhin, Cand. Sci. (Eng.) (2022), Engeneer of educational center "Energy Effective engineering systems"</p><p>49 A, Kronverkskii Ave., St Petersburg 197101</p></bio><email xlink:type="simple">asanokhin@itmo.ru</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-5770-1543</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Еськов</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Es’kov</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Еськов Андрей Владимирович – кандидат технических наук (2014), руководитель лаборатории технологии материалов и элементов интегральной радиофотоники</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Andrej V. Es'kov, Cand. Sci. (Eng.) (2014), Head of the Laboratory of Technology of Materials and Elements of Integrated Microwave Photonics</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">aeskow@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-9136-0831</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Белявский</surname><given-names>П. Ю.</given-names></name><name name-style="western" xml:lang="en"><surname>Belyavskiy</surname><given-names>P. Yu.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Белявский Павел Юрьевич – кандидат физико-математических наук (2008), инженер кафедры физической электроники и технологии</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Pavel Yu. Belyavskiy, Cand. Sci. (Eng.) (2008), Engineer of the Department of Physical Electronics and Technology</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">pybelyavskiy@etu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0002-6098-9677</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Антонова</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Antonova</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Антонова Анна Сергеевна – магистр по направлению "Электроника и наноэлектроника" (2024), аспирантка кафедры физической электроники и технологии</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Anna S. Antonova, Master in Electronics and Nanoelectronics (2024), Postgraduate student of the Department of Physical Electronics and Technologies</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">as.antonova17@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-2348-3773</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Семенов</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Semenov</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Семенов Александр Анатольевич – доктор технических наук (2017), заведующий кафедрой физической электроники и технологии</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Alexander A. Semenov, Dr Sci. (Eng.) (2017), Head of the Department of Physical Electronics and Technology</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">aasemenov@etu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Saint Petersburg Electrotechnical University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Алферовский университет; Физико-технический институт им. А. Ф. Иоффе Российской академии наук; Институт аналитического приборостроения Российской академии наук</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Alferov University; Ioffe Institute; Institute for Analytical Instrumentation&#13;
of the Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина); Университет ИТМО</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Saint Petersburg Electrotechnical University; ITMO University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>03</day><month>05</month><year>2025</year></pub-date><volume>28</volume><issue>2</issue><fpage>57</fpage><lpage>68</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Мыльников И.Л., Сошников И.П., Дедык А.И., Павлова Ю.В., Анохин А.С., Еськов А.В., Белявский П.Ю., Антонова А.С., Семенов А.А., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Мыльников И.Л., Сошников И.П., Дедык А.И., Павлова Ю.В., Анохин А.С., Еськов А.В., Белявский П.Ю., Антонова А.С., Семенов А.А.</copyright-holder><copyright-holder xml:lang="en">Mylnikov I.L., Soshnikov I.P., Dedyk A.I., Pavlova Y.V., Anokhin A.S., Es’kov A.V., Belyavskiy P.Y., Antonova A.S., Semenov A.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://re.eltech.ru/jour/article/view/995">https://re.eltech.ru/jour/article/view/995</self-uri><abstract><p>Введение. Растущая мощность элементной базы современных электронных приборов задает новые стандарты охлаждения устройств. Перспективным методом охлаждения является использование электрокалорического эффекта как самого доступного и простого в реализации среди всех калорических эффектов. Однако тепловые гистерезисные эффекты вблизи точки фазового перехода отрицательно влияют на уровень электрокалорического отклика и, соответственно, на эффективность охлаждения. Также немаловажно требование к экологичности устройств, что не позволяет использовать в качестве материалов свинецсодержащие соединения, в которых электрокалорический эффект достигает больших значений. Альтернативным материалом могут выступать твердые растворы на основе титаната бария, однако изучению температурных гистерезисных явлений в них уделено очень мало внимания.Цель работы. Исследование температурных гистерезисных явлений в сегнетоэлектрических керамиках.Материалы и методы. Исследуемые образцы помещаются в жидкостный термостат и проходят цикл "нагрев-охлаждение" с заданной скоростью. По полученным температурным зависимостям диэлектрической проницаемости рассчитывается размер температурного гистерезиса. Оценка среднего размера зерен осуществляется по фотографиям поверхности образцов, полученным с помощью сканирующего электронного микроскопа.Результаты. Исследовано влияние процессов синтеза на структуру и размеры кристаллитов керамического титаната бария и их диэлектричекие свойства. Экспериментально изучена зависимость размеров кристаллитов титаната бария и пористости образцов от температуры спекания. Определена область температур эффективного спекания выше 1320 °С. Исследованы диэлектрические характеристики синтезированных образцов при нагреве и охлаждении. Определены параметры температурного гистерезиса и диэлектрических свойств. Показано, что изменение температурного гистерезиса связано с изменением размеров кристаллитов титаната бария и площади контакта между ними.Заключение. На основании полученных результатов выдвинуто предположение об оптимальной температуре спекания образцов, при которой материал обладает достаточно хорошими диэлектрическими свойствами, при этом уровень температурного гистерезиса мал.</p></abstract><trans-abstract xml:lang="en"><p>Introduction. The growing power of modern electronic devices imposes stricter requirements on their cooling systems. One promising cooling method employs the electrocaloric effect as the most accessible and simple phenomenon among all caloric effects to implement. However, thermal hysteresis near the phase transition point negatively affects the magnitude of the electrocaloric response and the cooling efficiency. Another important factor is the requirement for environmental friendliness of the devices, which makes the use of lead-containing compounds undesirable despite their pronounced electrocaloric effect. A possible alternative to such materials comprises solid solutions based on barium titanate; however, their temperature hysteresis phenomena are poorly studied.Aim. Investigation of temperature hysteresis phenomena in ferroelectric ceramics.Materials and methods. The samples under study were placed in a liquid thermostat to undergo a heating and cooling cycle at a given rate. The value of temperature hysteresis was calculated from the temperature dependencies of dielectric permittivity. The average grain size was estimated using SEM images of the sample surface.Results. The influence of synthesis processes on the structure and grain size of ceramic barium titanate, as well as its dielectric properties, were studied. Temperature dependencies of the grain size of barium titanate and the porosity of sintered samples were studied experimentally. The temperature range of effective sintering above 1320 °C was determined. Dielectric characteristics of the samples at heating and cooling were studied. The parameters of temperature hysteresis and dielectric properties were determined. Changes in the value of temperature hysteresis were shown to be associated with changes in the grain size of barium titanate and the contact area between the grains.Conclusion. An assumption about the optimal temperature of sample sintering was made. At this temperature, the material exhibits sufficiently good dielectric properties at a low temperature hysteresis.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>сегнетоэлектрик</kwd><kwd>титанат бария</kwd><kwd>температурный гистерезис</kwd><kwd>размер зерна</kwd><kwd>электрокалорический эффект</kwd></kwd-group><kwd-group xml:lang="en"><kwd>ferroelectric</kwd><kwd>barium titanate</kwd><kwd>temperature hysteresis</kwd><kwd>grain size</kwd><kwd>electrocaloric effect</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Исследование выполнено при финансовой поддержке Министерства образования и науки Российской Федерации (грант № ФСЕЕ-2022-0017).</funding-statement><funding-statement xml:lang="en">The reported study was funded by Ministry of Education and Science of Russian Federation (grant No. FSEE‐2022‐0017)</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Thermal Conductivity Reduction and Thermoelectric Figure of Merit Increase by Embedding Nanoparticles in Crystalline Semiconductors / W. 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