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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">radioelectronics</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений России. Радиоэлектроника</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of the Russian Universities. Radioelectronics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1993-8985</issn><issn pub-type="epub">2658-4794</issn><publisher><publisher-name>Saint Petersburg Electrotechnical University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32603/1993-8985-2024-27-4-61-71</article-id><article-id custom-type="elpub" pub-id-type="custom">radioelectronics-914</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МИКРО- И НАНОЭЛЕКТРОНИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICRO- AND NANOELECTRONICS</subject></subj-group></article-categories><title-group><article-title>Синтез молекулярным наслаиванием и исследование наноструктурированных оксидных слоев в высокоаспектных подложках</article-title><trans-title-group xml:lang="en"><trans-title>Molecular Layering Synthesis and Investigation of Nanostructured Oxide Layers in High Aspect Ratio Substrates</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-8745-7019</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Барабан</surname><given-names>А. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Baraban</surname><given-names>A. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Барабан Александр Петрович – доктор физико-математических наук (1991), профессор (2008), заведующий кафедрой электроники твердого тела,</p><p>ул. Ульяновская, д. 1, корп. М, Петергоф, 198504.</p></bio><bio xml:lang="en"><p>Alexander P. Baraban, Dr Sci. (Phys.-Math.) (1991), Professor (2008), Head of the Department of Solid State Electronics,</p><p>1, bldg. M, Ulyanovskaya St., Peterhof 198504.</p></bio><email xlink:type="simple">a.baraban@spbu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Дмитриев</surname><given-names>В. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Dmitriev</surname><given-names>V. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Дмитриев Валентин Александрович – кандидат физико-математических наук (2005), старший научный сотрудник кафедры электроники твердого тела,</p><p>ул. Ульяновская, д. 1, корп. М, Петергоф, 198504.</p></bio><bio xml:lang="en"><p>Vladimir A. Dmitriev, Cand. Sci. (Phys.-Math.) (2005), Senior Researcher of Department of Solid State Electronics,</p><p>1, bldg. M, Ulyanovskaya St., Peterhof 198504.</p></bio><email xlink:type="simple">v.dmitriev@spbu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Дрозд</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Drozd</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Дрозд Арсений Викторович – аспирант, младший научный сотрудник инжинирингового центра микротехнологии и диагностики,</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022.</p></bio><bio xml:lang="en"><p>Arsenii V. Drozd, Postgraduate Student, Junior Researcher at the Engineering Center for Microtechnology and Diagnostics,</p><p>5 F, Professor Popov St., St Petersburg 197022.</p></bio><email xlink:type="simple">adrozd93@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-6500-5492</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мошников</surname><given-names>В. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Moshnikov</surname><given-names>V. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Мошников Вячеслав Алексеевич – доктор физико-математических наук (1997), профессор кафедры микро- и наноэлектроники,</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022.</p></bio><bio xml:lang="en"><p>Vyacheslav A. Moshnikov, Dr Sci. (Phys.-Math.) (1997), Professor of the Department of Micro- and Nanoelectronics,</p><p>5 F, Professor Popov St., St Petersburg 197022.</p></bio><email xlink:type="simple">vamoshnikov@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Saint Petersburg State University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Saint Petersburg Electrotechnical University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2024</year></pub-date><pub-date pub-type="epub"><day>28</day><month>09</month><year>2024</year></pub-date><volume>27</volume><issue>4</issue><fpage>61</fpage><lpage>71</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Барабан А.П., Дмитриев В.А., Дрозд А.В., Мошников В.А., 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Барабан А.П., Дмитриев В.А., Дрозд А.В., Мошников В.А.</copyright-holder><copyright-holder xml:lang="en">Baraban A.P., Dmitriev V.A., Drozd A.V., Moshnikov V.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://re.eltech.ru/jour/article/view/914">https://re.eltech.ru/jour/article/view/914</self-uri><abstract><sec><title>Введение</title><p>Введение. Твердотельные электронные умножители (ТЭУ) в матричном исполнении, известные как микроканальные пластины (МКП), являются неотъемлемой частью современной электроники. В связи с развитием технологии молекулярного наслаивания (МН) появилась возможность ее применения для управления и улучшения характеристик ТЭУ нанесением тонких слоев внутри каналов этих структур.</p></sec><sec><title>Цель работы</title><p>Цель работы. Изучение возможности нанесения тонких слоев внутри поверхности каналов ТЭУ МН с целью повышения коэффициента вторичной электронной эмиссии (КВЭЭ) для улучшения эксплуатационных характеристик структур.</p></sec><sec><title>Материалы и методы</title><p>Материалы и методы. В работе был применен метод МН для нанесения нанометровых пленок оксидов магния и алюминия внутри каналов ТЭУ. Состав и структура слоев исследовались с помощью растровой электронной микроскопии, рентгеновской фотоэлектронной спектроскопии, анализа вторичной электронной эмиссии, атомной силовой микроскопии.</p></sec><sec><title>Результаты</title><p>Результаты. Были синтезированы тонкие пленки оксида алюминия и оксида магния внутри микронных каналов ТЭУ, показана высокая равномерность слоев по всей длине каналов. Толщина слоев варьировалась в диапазоне от 2 до 30 нм. Получены слои с улучшенными эмиссионными и защитными характеристиками. Проведены сравнительные испытания контрольных образцов МКП, содержащих синтезированные пленки.</p></sec><sec><title>Заключение</title><p>Заключение. Показана перспективность нанесения эмиссионных слоев внутри каналов ТЭУ. Структуры с высоким аспектным отношением являются перспективным объектом для применения технологии МН. Создание нанокомпозиционных структур на основе МКП открывает возможность принципиального совершенствования технологии производства материалов и приборов оптико-электронной техники. Проведены экспериментальные исследования структур МКП, содержащих слои оксида алюминия, полученные технологией МН, для регистрации столкновения пучков (FBBC) для работы в детекторах на ускорительном комплексе NICA. Показано, что после нанесения в каналах тестируемых образцов МКП пленки Al2O3 толщиной 3.0 нм амплитуда сигнала возросла в 1.5 раза, а для образцов с толщиной пленки 10 нм амплитуда увеличилась почти в 2.5 раза.</p></sec></abstract><trans-abstract xml:lang="en"><sec><title>Introduction</title><p>Introduction. Solid-state electron multipliers (EMs) in matrix design, referred to as microchannel plates (MCPs), are an integral part of modern electronics. Recent progress in the field of molecular layering (ML) technology has offered an opportunity to tailor and improve the characteristics of solid-stated EMs by depositing thin layers inside the channels of these structures.</p></sec><sec><title>Aim</title><p>Aim. To study the possibility of depositing thin layers inside the surface of solid-state EM channels by ML in order to increase the secondary electron emission coefficient (SEEC) of such structures, thereby improving their performance characteristics.</p></sec><sec><title>Materials and methods</title><p>Materials and methods. The ML method was used to deposit nanometer films of magnesium and aluminum oxides inside solid-state EM channels. The composition and structure of the layers were studied using scanning electron microscopy, X-ray photoelectron spectroscopy, secondary electron emission analysis, and atomic force microscopy.</p></sec><sec><title>Results</title><p>Results. Thin aluminum oxide and magnesium oxide films were synthesized inside the micron channels of solidstate EMs. The layers exhibited high uniformity along the entire length of the channels. The layer thickness varied in the range from 2 to 30 nm. Layers with improved emission and protective characteristics were obtained. Comparative tests of MCP samples containing the synthesized films were carried out.</p></sec><sec><title>Conclusion</title><p>Conclusion. Good prospects for the application of emissive layers inside solid-state EM channels were shown. Structures with a high aspect ratio are promising objects for ML application. The creation of nanocomposite structures based on MCPs opens up the fundamental possibility of improving the current technology of producing electrooptic materials and devices. The MCP structures containing aluminum oxide layers obtained by ML technology were experimentally tested to detect beam collisions (FBBC) for work in detectors at the NICA accelerator complex. Following deposition of a 3.0 nm-thick Al2O3 film in the channels of the tested MCP samples, the signal amplitude increased by 1.5 times. The deposition of layers with a film thickness of 10 nm resulted in a 2.5-fold increase in the amplitude.</p></sec></trans-abstract><kwd-group xml:lang="ru"><kwd>вторичная электронная эмиссия</kwd><kwd>молекулярное наслаивание</kwd><kwd>твердотельные электронные умножители</kwd><kwd>микроканальные пластины</kwd><kwd>оксид алюминия</kwd><kwd>оксид магния</kwd></kwd-group><kwd-group xml:lang="en"><kwd>secondary electron emission</kwd><kwd>molecular layering</kwd><kwd>solid state electron multipliers</kwd><kwd>microchannel plates</kwd><kwd>aluminum oxide</kwd><kwd>magnesium oxide</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена с использованием оборудования ресурсных центров СПбГУ "Междисциплинарный центр по направлению нанотехногии", "Инновационные технологии композитных наноматериалов".</funding-statement><funding-statement xml:lang="en">The work was carried out using the equipment of the resource centers of St Petersburg State University "Interdisciplinary Center for Nanotechnology" and "Innovative Technologies of Composite Nanomaterials".</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Бронштейн И. 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