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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">radioelectronics</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений России. Радиоэлектроника</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of the Russian Universities. Radioelectronics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1993-8985</issn><issn pub-type="epub">2658-4794</issn><publisher><publisher-name>Saint Petersburg Electrotechnical University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32603/1993-8985-2023-26-6-74-93</article-id><article-id custom-type="elpub" pub-id-type="custom">radioelectronics-819</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЭЛЕКТРОНИКА СВЧ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICROWAVE ELECTRONICS</subject></subj-group></article-categories><title-group><article-title>Методика разработки широкополосных отрицательных индуктивностей с малым отклонением для применений в СВЧ-диапазоне</article-title><trans-title-group xml:lang="en"><trans-title>A Methodology to Design Broadband Negative Inductors with Tight Tolerance for Microwave Applications</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Буянтуев</surname><given-names>Б. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Buiantuev</surname><given-names>B. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Буянтуев Баир Саянович – магистр по направлению "Конструирование и технология электронных средств" (2016, СПбГЭТУ "ЛЭТИ"); начальник отдела разработки и модернизации РЭА, АО "НИТИ "Авангард". Автор 11 научных публикаций. Сфера научных интересов – нефостеровские элементы и их применения.</p><p>Кондратьевский пр., д. 72, Санкт-Петербург, 195271</p></bio><bio xml:lang="en"><p>Bair S. Buiantuev, Master in electronic design and technology (2016, Saint Petersburg Electrotechnical University); the Head of the Department for Design and Upgrade of Radio Electronic Equipment, JSC "NITI "Avangard". The author of 11 scientific publications. Area of expertise: non-Foster elements and their applications.</p><p>72, Kondratievsky Ave., St Petersburg 195271</p></bio><email xlink:type="simple">ber89@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Калмыков</surname><given-names>Н. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Kalmykov</surname><given-names>N. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Калмыков Никита Сергеевич – магистр по направлению "Конструирование и технология электронных средств" (2020, СПбГЭТУ "ЛЭТИ"), младший научный сотрудник кафедры микроволновой электроники. Автор 11 научных работ. Сфера научных интересов – нефостеровские элементы, СВЧ-фильтры.</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Nikita S. Kalmykov, Master in electronic design and technology (2020, Saint Petersburg Electrotechnical University), a Junior Researcher at the Department of Microwave Electronics. The author of 11 scientific publications. Area of expertise: non-Foster elements and microwave filters.</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">nkalmykoff@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Яковенко</surname><given-names>Е. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Iakovenko</surname><given-names>E. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Яковенко Егор Валерьевич – магистр по направлению "Электроника и наноэлектроника" (2023, СПбГЭТУ "ЛЭТИ"); инженер 2 категории, АО "МАРТ". Сфера научных интересов – нефостеровские элементы, частотно-перестраиваемые фильтры.</p><p>12-я линия В.О., д. 51 к. 2, Санкт-Петербург, 199178</p></bio><bio xml:lang="en"><p>Egor V. Iakovenko, Master in electronics and nanoelectronics (2023, Saint Petersburg Electrotechnical University); a second-class engineer at JSC "MART". Area of expertise: non-Foster elements and frequency-tunable filters.</p><p>51-2, 12th Line of Vasilievsky Island, St Petersburg 199178</p></bio><email xlink:type="simple">jakovenkoegor7201@yandex.ru</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-2477-0312</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Холодняк</surname><given-names>Д. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Kholodnyak</surname><given-names>D. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Холодняк Дмитрий Викторович – доктор технических наук (2016), доцент (2022), профессор, ведущий научный сотрудник, и.о. заведующего кафедрой микроволновой электроники. Автор более 200 научных работ. Сфера научных интересов – СВЧ-применения метаматериалов, высокотемпературных сверхпроводников, низкотемпературной совместно обжигаемой керамики и нефостеровских элементов.</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Dmitry V. Kholodnyak, Dr. Sci. (Eng.) (2016), Professor, Leading Researcher, Acting Chair of the Department of Microwave Electronics. The author of 200 scientific publications. Area of expertise: microwave applications of metamaterials; high-temperature superconductors; low-temperature cofired ceramics, and non-Foster elements.</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">DVKholodnyak@etu.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru">АО "НИТИ "Авангард"<country>Россия</country></aff><aff xml:lang="en">JSC "NITI "Avangard"<country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru">Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)<country>Россия</country></aff><aff xml:lang="en">Saint Petersburg Electrotechnical University<country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru">АО "МАРТ"<country>Россия</country></aff><aff xml:lang="en">JSC "MART"<country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>27</day><month>12</month><year>2023</year></pub-date><volume>26</volume><issue>6</issue><fpage>74</fpage><lpage>93</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Буянтуев Б.С., Калмыков Н.С., Яковенко Е.В., Холодняк Д.В., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Буянтуев Б.С., Калмыков Н.С., Яковенко Е.В., Холодняк Д.В.</copyright-holder><copyright-holder xml:lang="en">Buiantuev B.S., Kalmykov N.S., Iakovenko E.V., Kholodnyak D.V.</copyright-holder><license license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://re.eltech.ru/jour/article/view/819">https://re.eltech.ru/jour/article/view/819</self-uri><abstract><sec><title>Введение</title><p>Введение. Нефостеровские элементы (НФЭ) имитируют в определенном диапазоне частот поведение гипотетических реактивных элементов с отрицательными значениями индуктивности или емкости и используются для компенсации частотной зависимости традиционных реактивностей, что позволяет создавать широкополосные СВЧ-устройства. Для реализации НФЭ применяются конверторы отрицательного импеданса (КОИ) – активные цепи, преобразующие импеданс нагрузки во входной импеданс противоположного знака. Ошибка преобразования, обусловленная неоптимальным выбором параметров КОИ, а также неидеальностью его элементов, ограничивает точность реализации значений и рабочую полосу частот НФЭ. Необходимость учета большого количества факторов, которые опосредованно и разнонаправленно влияют на конечный результат, и отсутствие универсальной методики значительно осложняют разработку НФЭ. Как следствие, характеристики НФЭ в широкой полосе частот заметно отличаются от целевых, что ограничивает возможности практических применений.</p></sec><sec><title>Цель работы</title><p>Цель работы. Предложить методику разработки отрицательных индуктивностей на основе КОИ, построенного по схеме Линвилла, которая позволила бы компенсировать ошибку преобразования и создавать широкополосные отрицательные индуктивности с малым отклонением от целевого значения.</p></sec><sec><title>Материалы и методы</title><p>Материалы и методы. Рассмотрено влияние параметров отдельных составляющих КОИ на частотные характеристики отрицательной индуктивности. На основании проведенного анализа и выявленных взаимосвязей предложена методика пошаговой разработки отрицательных индуктивностей с малым отклонением в широкой полосе частот. Показано, что при реализации отрицательных индуктивностей с большими абсолютными значениями целесообразно использовать в нагрузке КОИ отрезок длинной линии вместо сосредоточенной индуктивности, т.к. это позволяет обеспечить более широкую полосу частот при меньшем отклонении от целевого значения отрицательной индуктивности.</p></sec><sec><title>Результаты</title><p>Результаты. Для демонстрации возможностей, которые открывает применение предложенной методики, представлены результаты моделирования ряда отрицательных индуктивностей с фиксированным набором значений и отклонений в гигагерцовом диапазоне частот.</p></sec><sec><title>Заключение</title><p>Заключение. Полученные результаты показывают, что предложенная методика позволяет без применения численной оптимизации компенсировать ошибку преобразования и тем самым уменьшить отклонение значения отрицательной индуктивности от целевого в заданной полосе частот или расширить рабочую полосу частот при заданном допустимом отклонении отрицательной индуктивности.</p></sec></abstract><trans-abstract xml:lang="en"><sec><title>Introduction</title><p>Introduction. Non-Foster elements (NFEs) mimic behavior of hypothetical negative inductors or capacitors in a certain frequency band. NFEs are used to compensate reactance of conventional inductors and capacitors that allows designing broadband microwave devices. To realize NFEs, active circuits referred to as negative impedance converters (NICs) are employed to convert the load impedance into the negative input impedance. The conversion error, caused by non-optimal choice of NIC parameters and non-idealities of NIC components, limits the accuracy and operating bandwidth of NFEs. The necessity to account for many factors, which indirectly and oppositely impact the final result, and unavailability of a universal design methodology complicate the design of NFEs significantly. As a result, broadband NFE characteristics differ from the target ones remarkably that limits practical applications.</p></sec><sec><title>Aim</title><p>Aim. Elaboration of a design methodology to compensate the Linvill’s NIC conversion error and realize high-accuracy broadband negative inductors.</p></sec><sec><title>Materials and methods</title><p>Materials and methods. Influence of NIC constituent parameters on the negative inductor frequency characteristics is considered. The performed analysis and the identified relationships allowed us to propose a step-by-step methodology to design negative inductors having tight tolerance over a broad frequency band. The use of a transmission line section instead of a lumped inductor in the NIC load when realizing negative inductors of high absolute values is shown to be advantageous as this allows providing better tolerance and wider bandwidth.</p></sec><sec><title>Results</title><p>Results. In order to demonstrate possibilities enabled by the proposed methodology, simulation results are presented for the GHz-range negative inductors with a set of inductance and tolerance values.</p></sec><sec><title>Conclusion</title><p>Conclusion. The results obtained show that the proposed methodology makes it possible to compensate the conversion error without any numerical optimization and therefore to reduce the deviation of the negative inductance from the target value in the given frequency range or to broaden the bandwidth for a given tolerable deviation of the negative inductance.</p></sec></trans-abstract><kwd-group xml:lang="ru"><kwd>нефостеровский элемент</kwd><kwd>отрицательная индуктивность</kwd><kwd>конвертор отрицательного импеданса</kwd></kwd-group><kwd-group xml:lang="en"><kwd>Non-Foster element</kwd><kwd>negative inductance</kwd><kwd>negative impedance converter</kwd></kwd-group><funding-group xml:lang="ru"><funding-statement>Грант РНФ № 23-29-00991.</funding-statement></funding-group><funding-group xml:lang="en"><funding-statement>The RSF Grant No. 23-29-00991.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Foster R. 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