radioelectronicsИзвестия высших учебных заведений России. РадиоэлектроникаJournal of the Russian Universities. Radioelectronics1993-89852658-4794Saint Petersburg Electrotechnical University10.32603/1993-8985-2023-26-4-33-55radioelectronics-776Research ArticleЭЛЕКТРОНИКА СВЧMICROWAVE ELECTRONICSКонструктивные подходы к интеграции приборов на основе разных полупроводниковых технологий в микроэлектронике СВЧApproaches to Heterogeneous Integration for Millimeter-Wave Applicationshttps://orcid.org/0000-0002-6792-1096ЕфимовА. С.EfimovA. S.

Ефимов Александр Сергеевич – магистр по направлению "Электроника и наноэлектроника" (Рязанский государственный радиотехнический университет, 2017), инженер 2-й категории . 

ул. Вокзальная, д. 2а, Фрязино, 141190Автор более 15 научных работ. Сфера научных интересов – широкозонные полупроводники; усилители мощности и малошумящие усилители СВЧ; интеграция микроэлектроники СВЧ.

Alexander S. Efimov - Master`s Degree in electronics and nanoelectronics (Ryazan State Radioengineering University, 2017), Engineer 

2A, Vokzalnaya st., Fryazino 141190

The author of more than 15 scientific publications. Area of expertise: wide band gap semiconductors; millimeter-wave power amplifiers and low-noise amplifiers; heterogeneous integration in mm-wave application.

easmov@gmail.comАО «НПП "Исток" им. Шокина»РоссияJSC RPC "Istok" n. a. Shokin"Russian Federation2023290920232643355Copyright © Ефимов А.С., 20232023Ефимов А.С.Efimov A.S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://re.eltech.ru/jour/article/view/776Введение

Введение. Достижение высоких характеристик радиоэлектронной системы требует применения комбинации приборов, реализованных на разных полупроводниковых технологиях, – гетерогенной интеграции. Достоинства гетерогенной интеграции очевидны при компактном соединении элементов в единую схему. Развитие подходов интеграции, обеспечивающих повышенную функциональность и улучшенные рабочие характеристики, является актуальной проблемой современной электронной компонентной базы СВЧ.

Цель работы

Цель работы. Аналитический обзор современных и перспективных направлений конструктивных решений интеграции микроэлектроники СВЧ на основе разных широкозонных полупроводниковых технологий.

Материалы и методы

Материалы и методы. Рассмотрены 8 подходов интеграции, обеспечивающих соединение приборов на разных полупроводниковых технологиях в СВЧ-диапазоне: монолитная гетерогенная интеграция, монтаж пластина-к-пластине, метод переноса слоев, интеграция в единую подложку, интеграция методом печати, интеграция проволоками, перевернутый монтаж, hot-via. Рассмотрены конструктивные подходы интеграции, этапы реализации, достоинства и недостатки.

Результаты

Результаты. Монолитная гетерогенная интеграция и монтаж пластина-к-пластине, как и метод переноса слоев, несмотря на минимальные длины межсоединений, имеют ряд фундаментальных ограничений, связанных с совместимостью разных полупроводниковых материалов, а также требуют больших технологических возможностей, что сдерживает их развитие и применение. Интеграция в единую подложку из-за вариативности реализации позволяет обеспечить уникальные характеристики, например благодаря интеграции магнитных материалов, однако требует высокой сложности технологических процессов интеграции. Метод перевернутого монтажа обеспечивает минимальные потери и паразитные составляющие переходных межсоединений в СВЧ-диапазоне благодаря миниатюризации переходных межсоединений. Hot-via, как модификация метода перевернутого монтажа, обеспечивает лучшую совместимость с микрополосковыми схемами. Их дальнейшее совершенствование и массовое применение во многом зависят от развития технологии формирования локальных переходных межсоединений.

Заключение

Заключение. Развитие подходов близкой интеграции в микроэлектронике СВЧ идет как в монолитном направлении – монолитная гетерогенная интеграция и монтаж пластина-к-пластине, так и в гибридномонолитном – метод переноса слоев, интеграция в единую подложку, применение аддитивных технологий, перевернутый монтаж и hot-via. Проведенный сравнительный анализ представленных методов имеет практическое применение

Introduction

Introduction. Enhanced performance of electronic systems can be achieved by heterogeneous integration of different semiconductor technologies. The benefits of heterogeneous integration become obvious when close connections between the devices are provided. The development of integration approaches, enabling functionality and improved performance, appears a relevant task for modern microwave microelectronics.

Aim

Aim. Review of state-of-the-art and promising heterogeneous integration concepts and techniques in microwave microelectronics.

Materials and methods

Materials and methods. Eight integration approaches that ensure the connection of devices based on different semiconductor technologies for microwave frequencies are considered: monolithic heterogeneous integration, wafer bonding, micro-transfer printing, embedded chip assembly, print additive manufacturing, wire bonding, flip-chip, and hotvia. The integration approaches are analyzed in terms of their implementation specifics, advantages and disadvantages.

Results

Results. Monolithic heterogeneous integration and wafer bonding, as well as micro-transfer printing, despite the minimum interconnections, have a number of fundamental limitations. These limitations are related to the compatibility of various semiconductor technologies and the necessity of high technological capabilities. The technology of embedded chip assembly enables the variability of implementation techniques, which makes it possible to provide unique characteristics, e.g., due to the integration of magnetic materials. However, this approach is associated with a high complexity of integration technological processes. Flip-chip integration ensures minimal interconnect losses due to bump miniaturization. Hot-via, as a modification of flip-chip, provides for a better compatibility with microstrip type circuitry. Their further improvement and mass application largely depends on the development of technologies for the formation of low-pitch interconnections.

Conclusion

Conclusion. The development of close integration approaches in microwave microelectronics is proceeding both in the monolithic direction, i.e., monolithic heterogeneous integration wafer bonding, as well as in the quasi-monolithic direction, i.e., micro-transfer printing, embedded chip assembly, print additive manufacturing, flip-chip, and hot-via. The conducted comparative analysis of the presented methods has practical application.

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The authors declare that there are no conflicts of interest present.