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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">radioelectronics</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений России. Радиоэлектроника</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of the Russian Universities. Radioelectronics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1993-8985</issn><issn pub-type="epub">2658-4794</issn><publisher><publisher-name>Saint Petersburg Electrotechnical University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32603/1993-8985-2023-26-3-48-57</article-id><article-id custom-type="elpub" pub-id-type="custom">radioelectronics-759</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЭЛЕКТРОДИНАМИКА, МИКРОВОЛНОВАЯ ТЕХНИКА, АНТЕННЫ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ELECTRODYNAMICS, MICROWAVE ENGINEERING, ANTENNAS</subject></subj-group></article-categories><title-group><article-title>Тонкие пленки диоксида ванадия для применения в СВЧ-ключах с электрическим управлением</article-title><trans-title-group xml:lang="en"><trans-title>Thin Vanadium Dioxide Films for Use in Microwave Keys with Electric Control</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Неустроев</surname><given-names>И. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Neustroev</surname><given-names>Ilya D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Неустроев Илья Дмитриевич – магистрант 2-го года.</p><p>Автор одной научной публикации. Сфера научных  интересов – технология материалов электронной  техники, свойства нелинейных материалов.</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург,</p><p>197022</p></bio><bio xml:lang="en"><p>Ilya D. Neustroev, student of the 2nd year of master of  Saint Petersburg Electrotechnical University.</p><p>The author of 1 scientific publication. Area of expertise:  technology of electronic materials, properties of non- linear materials.</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">neustroev.ilay@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Легкова</surname><given-names>Т. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Legkova</surname><given-names>Tatyana K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Легкова Татьяна Константиновна – аспирантка 2-го  года кафедры физической электроники и технологии.</p><p> Автор двух научных публикаций. Сфера научных  интересов – СВЧ-электроника, антенны, свойства  нелинейных материалов.</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Tatyana K. Legkova, Postgraduate Student of  Department of Physical Electronics and Technology.</p><p>The author of 2 scientific publications. Area of expertise:  microwave electronics; antennas, properties of nonlinear  materials.</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">legkova_tk@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Цымбалюк</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Tsymbalyuk</surname><given-names>Andrey A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Цымбалюк Андрей Александрович – аспирант 2-го  года кафедры физической электроники и технологии.</p><p>Автор двух научных публикаций. Сфера научных  интересов – технология материалов электронной  техники, свойства нелинейных материалов.</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Andrey A. Tsymbalyuk, Postgraduate Student of  Department of Physical Electronics and Technology.</p><p>The author of 2 scientific publications. Area of expertise:  technology of electronic materials, properties of non- linear materials.</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">tsymbalyuk.andrej@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-1017-5587</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Комлев</surname><given-names>А. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Komlev</surname><given-names>Andrey E.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Комлев Андрей Евгеньевич – кандидат технических  наук (2011), доцент кафедры физической  электроники и технологии.</p><p>Автор более 60 научных работ. Сфера научных  интересов – технология материалов электронной  техники, плазма.</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Andrey E. Komlev, Cand. Sci. (Eng.) (2011), Associate  professor of the Department of Physical Electronics and Technology.</p><p>The author of more than 60 scientific publications. Area of expertise: technology of electronic equipment materials, plasma.</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">aekomlev@etu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Saint Petersburg Electrotechnical University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>06</day><month>07</month><year>2023</year></pub-date><volume>26</volume><issue>3</issue><fpage>48</fpage><lpage>57</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Неустроев И.Д., Легкова Т.К., Цымбалюк А.А., Комлев А.Е., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Неустроев И.Д., Легкова Т.К., Цымбалюк А.А., Комлев А.Е.</copyright-holder><copyright-holder xml:lang="en">Neustroev I.D., Legkova T.K., Tsymbalyuk A.A., Komlev A.E.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://re.eltech.ru/jour/article/view/759">https://re.eltech.ru/jour/article/view/759</self-uri><abstract><p>Введение. Ввиду постоянно растущих требований к пропускной способности беспроводных систем связи все более востребованным становится применение перестраиваемых или коммутирующих устройств, выполненных на основе СВЧ-ключей. В настоящее время актуальным направлением является разработка СВЧ-ключей на основе нелинейных материалов, например диоксида ванадия. Ключи на основе данного материала имеют планарную конструкцию, которая вследствие своей простоты может быть широко востребована при создании СВЧ-устройств по гибридной технологии.Цель работы. Исследование свойств тонких пленок диоксида ванадия и разработка конструкции СВЧ-ключа с электрическим переключением на их основе.Материалы и методы. Экспериментальные образцы тонких пленок диоксида ванадия получены методом магнетронного распыления. Результаты экспериментального исследования параметров фазового перехода образцов материала были использованы при компьютерном моделировании планарной двухэлектродной структуры СВЧ-ключа методом конечных элементов.Результаты. Изготовлены экспериментальные образцы пленок диоксида ванадия и исследованы зависимости их удельного сопротивления от температуры. Показано, что у полученных пленок изменение сопротивления достигает трех порядков. Разработана конструкция ключа на основе пленок диоксида ванадия. Проведено моделирование формирования токопроводящего канала в пленках диоксида ванадия при подаче управляющего напряжения. Получены оценки порогового напряжения элемента в зависимости от его конструктивных параметров.Заключение. Использование экспериментальных данных как основы для компьютерного моделирования позволило определить пороговые значения токов, зависящих от топологии и конструкции СВЧ-ключа. Результаты моделирования структуры СВЧ-ключа показали, что сформированный токопроводящий канал имеет четко выраженные границы как по распределению плотности тока, так и по распределению температуры на поверхности пленки.</p></abstract><trans-abstract xml:lang="en"><p>Introduction. In view of the ever-tightening bandwidth requirements for wireless communication systems, the use of tunable or switching devices based on microwave keys is becoming increasingly popular. Currently, the development of microwave keys based on nonlinear materials, such as vanadium dioxide, is a relevant research direction. The keys based on this material are distinguished by a planar and simple design, thus being suitable for creating microwave devices using hybrid technology.Aim. To study the properties of thin vanadium dioxide films and to develop a microwave switch with electrical switching on their basis.Materials and methods. Experimental samples of thin vanadium dioxide films were obtained by magnetron sputtering. The phase transition parameters of the samples obtained experimentally were used in computer simulation of a planar two-electrode structure of a microwave key by the finite element method.Results. Experimental samples of vanadium dioxide films were manufactured, and the dependences of their resistivity on temperature were studied. The resistance of the obtained vanadium dioxide films was found to change threefold. A microwave key design based on vanadium dioxide films was developed. The formation of a currentconducting channel in vanadium dioxide films was simulated when a control voltage was applied. The threshold voltage of the element was estimated depending on its design parameters.Conclusion. The use of experimental data as a basis for computer simulation made it possible to determine the threshold values of currents depending on the topology and design of the proposed microwave key. The results of simulating the key structure showed the formed conductive channel to have clearly defined boundaries in terms of distribution of both current density and temperature across the film surface.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>диоксид ванадия</kwd><kwd>фазовый переход</kwd><kwd>компьютерное моделирование</kwd><kwd>управляемые СВЧ-элементы</kwd></kwd-group><kwd-group xml:lang="en"><kwd>vanadium dioxide</kwd><kwd>phase transition</kwd><kwd>computer simulation</kwd><kwd>controlled microwave elements</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при поддержке Российского научного фонда в рамках гранта № 22-29-01607.</funding-statement><funding-statement xml:lang="en">This work is supported by the Russian Science Foundation under grant № 22-29-01607.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Al-Falahy N., Alani O. 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