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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">radioelectronics</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений России. Радиоэлектроника</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of the Russian Universities. Radioelectronics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1993-8985</issn><issn pub-type="epub">2658-4794</issn><publisher><publisher-name>Saint Petersburg Electrotechnical University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32603/1993-8985-2022-25-3-86-95</article-id><article-id custom-type="elpub" pub-id-type="custom">radioelectronics-640</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЭЛЕКТРОНИКА СВЧ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICROWAVE ELECTRONICS</subject></subj-group></article-categories><title-group><article-title>Структурные и электрические свойства стеклокерамических сегнетоэлектрических композитных материалов</article-title><trans-title-group xml:lang="en"><trans-title>Structural and Electrical Properties of Glass-Ceramic Ferroelectric Composite Materials</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-9858-3846</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Тумаркин</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Tumarkin</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Тумаркин Андрей Вилевич - доктор технических наук (2017), доцент (2005), профессор кафедры физической электроники и технологии.</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022.</p></bio><bio xml:lang="en"><p>Andrey V. Tumarkin - Dr Sci. (Eng.) (2017), Associate Professor (2005), Professor of the Department of Physical Electronics and Technology of the Saint Petersburg Electrotechnical University.</p><p>5 F, Professor Popov St., St Petersburg 197022.</p></bio><email xlink:type="simple">avtumarkin@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1124-4081</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Сапего</surname><given-names>Е. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Sapego</surname><given-names>E. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Сапего Евгений Николаевич - исследователь (аспирантура СПбГЭТУ «ЛЭТИ» им. В.И. Ульянова (Ленина), 2021); младший научный сотрудник (2019).</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022.</p></bio><bio xml:lang="en"><p>Evgeny N. Sapego - Postgraduate Student (2021), Researcher Assistant (2019) of the Saint Petersburg Electrotechnical University.</p><p>5 F, Professor Popov St., St Petersburg 197022.</p></bio><email xlink:type="simple">ensapego@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-5673-2372</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гагарин</surname><given-names>А. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Gagarin</surname><given-names>A. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Гагарин Александр Геннадиевич - кандидат технических наук (2007), доцент кафедры физической электроники и технологии.</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022.</p></bio><bio xml:lang="en"><p>Alexander G. Gagarin - Cand. Sci (Eng.) (2007), Associate Professor of the Department of Physical Electronics and Technology of the Saint Petersburg Electrotechnical University.</p><p>5 F, Professor Popov St., St Petersburg 197022.</p></bio><email xlink:type="simple">aggagarin@etu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-9410-8917</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Тюрнина</surname><given-names>Н. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Tyurnina</surname><given-names>N. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Тюрнина Наталья Геральдовна - кандидат химических наук (2009), заместитель директора по научной работе, старший научный сотрудник.</p><p>наб. Макарова, д. 2, Санкт-Петербург, 199034.</p></bio><bio xml:lang="en"><p>Natalya G. Tyurnina - Cand. Sci (Chem.) (2009), Deputy Director for scientific work, Senior Researcher of the Institute of Silicate Chemistry of Russian Academy of Sciences.</p><p>2, Makarova emb., St Petersburg 199034.</p></bio><email xlink:type="simple">turnina.ng@iscras.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-3134-7309</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Тюрнина</surname><given-names>З. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Tyurnina</surname><given-names>Z. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Тюрнина Зоя Геральдовна - кандидат химических наук (2008), старший научный сотрудник.</p><p>наб. Макарова, д. 2, Санкт-Петербург, 199034.</p></bio><bio xml:lang="en"><p>Zoya G. Tyurnina - Cand. Sci (Chem.) (2008), Senior Researcher of the Institute of Silicate Chemistry of Russian Academy of Sciences.</p><p>2, Makarova emb., St Petersburg 199034.</p></bio><email xlink:type="simple">turnina.zg@iscras.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-0207-8429</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Синельщикова</surname><given-names>О. Ю.</given-names></name><name name-style="western" xml:lang="en"><surname>Sinelshchikova</surname><given-names>O. Yu.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Синельщикова Ольга Юрьевна - кандидат химических наук (2010), старший научный сотрудник Лаборатории физико-химического конструирования и синтеза функциональных материалов.</p><p>наб. Макарова, д. 2, Санкт-Петербург, 199034.</p></bio><bio xml:lang="en"><p>Olga Yu. Sinelshchikova - Cand. Sci (Chem.) (2010), Senior Researcher of the Laboratory of Physico-Chemical Design and Synthesis of Functional Materials of the Institute of Silicate Chemistry of Russian Academy of Sciences.</p><p>2, Makarova emb., St Petersburg 199034.</p></bio><email xlink:type="simple">sinelshikova@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-1085-8900</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Свиридов</surname><given-names>С. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Sviridov</surname><given-names>S. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Свиридов Сергей Иванович - доктор химических наук (2001), ведущий научный сотрудник.</p><p>наб. Макарова, д. 2, Санкт-Петербург, 199034.</p></bio><bio xml:lang="en"><p>Sergey I. Sviridov - Dr Sci. (Chem.) (2001), Deputy Director for scientific work, Senior Researcher at the Institute of Silicate Chemistry of Russian Academy of Sciences.</p><p>2, Makarova emb., St Petersburg 199034.</p></bio><email xlink:type="simple">sviridov@iscras.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru">Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина)<country>Россия</country></aff><aff xml:lang="en">Saint Petersburg Electrotechnical University<country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru">Институт химии силикатов РАН<country>Россия</country></aff><aff xml:lang="en">Institute of Silicate Chemistry of Russian Academy of Sciences<country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>28</day><month>06</month><year>2022</year></pub-date><volume>25</volume><issue>3</issue><fpage>86</fpage><lpage>95</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Тумаркин А.В., Сапего Е.Н., Гагарин А.Г., Тюрнина Н.Г., Тюрнина З.Г., Синельщикова О.Ю., Свиридов С.И., 2022</copyright-statement><copyright-year>2022</copyright-year><copyright-holder xml:lang="ru">Тумаркин А.В., Сапего Е.Н., Гагарин А.Г., Тюрнина Н.Г., Тюрнина З.Г., Синельщикова О.Ю., Свиридов С.И.</copyright-holder><copyright-holder xml:lang="en">Tumarkin A.V., Sapego E.N., Gagarin A.G., Tyurnina N.G., Tyurnina Z.G., Sinelshchikova O.Y., Sviridov S.I.</copyright-holder><license license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://re.eltech.ru/jour/article/view/640">https://re.eltech.ru/jour/article/view/640</self-uri><abstract><sec><title>Введение</title><p>Введение. Материалы, обладающие высокой диэлектрической проницаемостью, актуальны для использования в современной сверхвысокочастотной электронике в составе управляемых конденсаторов высокой энергетической плотности, систем преобразования энергии, мощных передающих антенн. Наиболее перспективными материалами для применения в упомянутых устройствах являются сегнетоэлектрики, обладающие высокой диэлектрической нелинейностью. Для увеличения электрической прочности сегнетоэлектрических материалов сегодня разрабатываются композитные структуры на основе смешения сегнетоэлектриков с линейными диэлектриками - материалами, обладающими малой диэлектрической проницаемостью, но высокой электрической прочностью. Преимуществом такого подхода является возможность создания новых многокомпонентных материалов с недостижимыми ранее свойствами и возможность регулировать компонентный состав, размеры включений и электрические свойства композитов в широких пределах. На основе пористого калийжелезосиликатного стекла (KFS), полученного методом ионного обмена, синтезированы стеклокерамические материалы, содержащие титанат бария, с целью использования на сверхвысоких частотах. Показано, что отжиг стеклокерамических композитов в кислородной среде положительно влияет на их структурные и электрические характеристики. Стеклокерамические образцы демонстрируют значительное увеличение диэлектрической проницаемости и снижение потерь после высокотемпературной обработки в кислороде.</p></sec><sec><title>Цель работы</title><p>Цель работы. Получение стеклокомпозитов посредством низкотемпературного спекания предварительно синтезированного BaTiO3 (BTO) и калийжелезосиликатного стекла, а также характеризация структуры и электрических свойств композитов на сверхвысоких частотах (СВЧ).</p></sec><sec><title>Материалы и методы</title><p>Материалы и методы. Кристаллическая структура и фазовый состав полученных пленок исследовались методом рентгеновской дифракции с помощью дифрактометра ДРОН-6 на эмиссионной спектральной линии CuKα1 (λ = 1.5406 Å). Диэлектрическая проницаемость е образцов на СВЧ оценивалась методом Николсона-Росса при комнатной температуре с использованием Agilent E4980A LCR-meter.</p></sec><sec><title>Результаты</title><p>Результаты. Согласно данным рентгеноструктурного анализа, синтезированные образцы представляют собой смесь KFS, сегнетоэлектрического BaTiO3 и диэлектрических полититанатов бария; соотношение последних определяет электрические свойства композитов. В зависимости от содержания титаната бария исследуемые образцы демонстрируют диэлектрическую проницаемость от 50 до 270 при уровне диэлектрических потерь 0.1...0.02.</p><p>Для исследуемых образцов, подверженных отжигу в кислородной среде, после высокотемпературной обработки наблюдается увеличение диэлектрической проницаемости на 10.25 % и рост управляемости при уменьшении диэлектрических потерь в среднем в 2 раза.</p></sec><sec><title>Заключение</title><p>Заключение. Наиболее перспективным с точки зрения структурных и электрических свойств представляется композит состава с массовой долей ВТО 70 % и массовой долей KFS 30 %. Для данного композита наблюдается увеличение диэлектрической проницаемости на 25 %, существенный рост нелинейности при одновременном снижении потерь более чем в 2 раза в результате отжига в кислородной среде.</p></sec></abstract><trans-abstract xml:lang="en"><sec><title>Introduction</title><p>Introduction. Materials exhibiting high dielectric permittivity are relevant for use in modern ultrahigh-frequency electronics. Among them, ferroelectrics with high dielectric nonlinearity present particular interest. The electrical strength of ferroelectric materials can be increased using modern composite structures based on mixing ferroelectries and linear dielectrics - materials exhibiting simultaneously low dielectric permittivity and high electrical strength. This approach provides for the opportunity of creating new multicomponent materials with previously unattainable properties and adjusting their component composition, inclusion size and electrical properties across a wide range. In this work, on the basis of porous potassium-iron-silicate glass (KFS) obtained by ion exchange, glass-ceramic materials containing barium titanate were synthesized for use at ultrahigh frequencies.</p></sec><sec><title>Aim</title><p>Aim. Production of glass composites by low-temperature sintering of pre-synthesized BaTiO3 (BTO) and potassium-iron-silicate glass, as well as characterization of their structural and electrical properties at ultrahigh frequencies (microwave).</p></sec><sec><title>Materials and methods</title><p>Materials and methods. The crystal structure and phase composition of the obtained films were studied by X-ray diffraction using a DRON-6 diffractometer by the emission spectral line CuKα1 (λ = 1.5406 Å). The dielectric permittivity (ε) of microwave samples was evaluated by the Nicholson-Ross method at room temperature using an Agilent E4980A LCR-meter.</p></sec><sec><title>Results</title><p>Results. According to X-ray diffraction analysis, the synthesized samples are a mixture of KFS glass, ferroelectric BaTiO3 and dielectric barium polytitanates; the ratio of the latter determines the electrical properties of the composites. Depending on the content of barium titanate, the studied samples demonstrate a dielectric constant from 50 to 270 at a dielectric loss level of 0.1...0.02. The samples subjected to annealing in an oxygen medium showed an increase in dielectric permittivity by 10.25 % and an increase in controllability with a decrease in dielectric losses by an average of two times.</p></sec><sec><title>Conclusion</title><p>Conclusion. The composite composition of 70 wt % BTO /30 wt % KFS was found to be the most promising in terms of structural and electrical properties. This composite showed an increase in dielectric permittivity by 25 % and a significant increase in nonlinearity, at the same time as reducing losses by more than two times as a result of annealing in an oxygen medium.</p></sec></trans-abstract><kwd-group xml:lang="ru"><kwd>стеклокерамические композиты</kwd><kwd>титанат бария</kwd><kwd>железосодержащее стекло</kwd><kwd>СВЧ</kwd></kwd-group><kwd-group xml:lang="en"><kwd>glass-ceramic composites</kwd><kwd>barium titanate</kwd><kwd>iron-containing glass</kwd><kwd>microwave</kwd></kwd-group><funding-group xml:lang="ru"><funding-statement>Работа выполнена в рамках государственного задания Министерства науки и высшего образования Российской Федерации № 075-01024-21-02 от 29.09.2021 (проект FSEE-2021-0014), при поддержке Российского фонда фундаментальных исследований (проект № 19-07-00600).</funding-statement></funding-group><funding-group xml:lang="en"><funding-statement>The work was supported by the Ministry of Science and Higher Education of the Russian Federation № 075-01024-21-02 dated 29.09.2021 (grant number no. 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