Nikolay A. Chuchvaga, PhD (2019), Senior Researcher; Senior lecturer at al-Farabi Kazakh National University and the Kazakh-German University. From 2010 to 2014, he was an employee, and also wrote bachelor's and master's theses at the P.I. Ioffe RAS. He completed his PhD thesis at the P.I. Ioffe RAS (Russia) and IPT LLP (Kazakhstan). 11 Ibragimov St., 050032, Almaty, Kazakhstan
Nikolay A. Chuchvaga, PhD (2019), Senior Researcher; Senior lecturer at al-Farabi Kazakh National University and the Kazakh-German University. From 2010 to 2014, he was an employee, and also wrote bachelor's and master's theses at the P.I. Ioffe RAS. He completed his PhD thesis at the P.I. Ioffe RAS (Russia) and IPT LLP (Kazakhstan). 11 Ibragimov St., 050032, Almaty, Kazakhstan
Julius Schulze, Master of science, Technologist, An der Baumschule 6-8, 09337 Hohenstein-Ernstthal, Germany
Julius Schulze, Master of science, Technologist, Meyer Burger, An der Baumschule 6-8, 09337 Hohenstein-Ernstthal, Germany
Vassiliy V. Klimenov, Chief Technologist, postgraduate studies - "Solid State and Condensed Matter Physics" Physics and Technology Institute 2006-2009, 11 Ibragimov St., 050032, Almaty, Kazakhstan
Vassiliy V. Klimenov, Chief Technologist, Postgraduate studies - "Solid State and Condensed Matter Physics" Physics and Technology Institute 2006-2009, 11 Ibragimov St., 050032, Almaty, Kazakhstan
Kairat S. Zholdybayev, Junior Researcher. Education: Master (Kazakh National University named after Al-Farabi, 2016, specialty - Nuclear Physic). After graduating from the master degree in 2016, he is engaged in research in the field of research of heterojunction silicon and perovskite solar cells at the Laboratory of Photoelectric Phenomena and Devices (LPNP). On this topic, he is preparing a thesis for the degree of Doctor of Philosophy PhD. 11 Ibragimov St., 050032, Almaty, Kazakhstan
Kairat S. Zholdybayev, Junior Researcher. Education: Master (Kazakh National University named after Al-Farabi, 2016, specialty - Nuclear Physic). After graduating from the master degree in 2016, he is engaged in research in the field of research of heterojunction silicon and perovskite solar cells at the Laboratory of Photoelectric Phenomena and Devices (LPNP). On this topic, he is preparing a thesis for the degree of Doctor of Philosophy PhD. 11 Ibragimov St., 050032, Almaty, Kazakhstan
Kazybek P. Aimaganbetov, Researcher. Master 2017 (Technical Physics, KazNRTU named after Satpayev). At the moment he is studying under the PhD program. 11 Ibragimov St., 050032, Almaty, Kazakhstan
Kazybek P. Aimaganbetov, Researcher, Master 2017 (Technical Physics, KazNRTU named after Satpayev). At the moment he is studying under the PhD program. 11 Ibragimov St., 050032, Almaty, Kazakhstan
Sultan R. Zhantuarov, Junior Researcher. Education: Master (National Research Tomsk Polytechnic University, 2014, specialty - 011200, «Physics»). After graduating from master’s degree in 2014, he is engaged in research in the field of research of perovskite solar cells at the Laboratory of Photoelectric Phenomena and Devices. On this topic, he is preparing a PhD thesis. 11 Ibragimov St., 050032, Almaty, Kazakhstan
Sultan R. Zhantuarov, Junior Researcher. Education: Master (National Research Tomsk Polytechnic University, 2014, specialty - 011200, «Physics»). After graduating from master’s degree in 2014, he is engaged in research in the field of research of perovskite solar cells at the Laboratory of Photoelectric Phenomena and Devices. On this topic, he is preparing a PhD thesis. 11 Ibragimov St., 050032, Almaty, Kazakhstan
Abay S. Serikkanov, Director of FTI LLP. Candidate of Physical and Mathematical Sciences, Chief Researcher, 11 Ibragimov St., 050032, Almaty, Kazakhstan
Abay S. Serikkanov, Director of FTI LLP. Candidate of Physical and Mathematical Sciences, Chief Researcher, 11 Ibragimov St., 050032, Almaty, Kazakhstan
Eugeny I. Terukov, Dr. Sci. (Eng.) in Technical Sciences in the specialty of "Semiconductors and Dielectrics" (1996), Professor, Head of laboratory, 26 Polytechnicheskaya St., 194021, St Petersburg, Russia
Eugeny I. Terukov, Dr. Sci. (Eng.) in Technical Sciences in the specialty of "Semiconductors and Dielectrics" (1996), Professor, Head of laboratory, 26 Polytechnicheskaya St., 194021, St Petersburg, Russia
Serekbol Zh. Tokmoldin, Dr. Sci. (Physics and Mathematics), Chief Researcher, Director of Silica Metals LLP and RDC SiTech LLP, 312 Raiymbek Ave., 050005, Almaty, Kazakhstan
Serekbol Zh. Tokmoldin, Dr. Sci. (Physics and Mathematics), Chief Researcher of the Research and Production Center of Agroengineering LLP; Director of Silica Metals LLP and RDC SiTech LLP, 312 Raiymbek Ave., 050005, Almaty, Kazakhstan
Nurlan S. Tokmoldin, PhD in Organic Electronics (2011), at the time of preparing the manuscript Head of Laboratory of Photovoltaic Phenomena and Devices. Currently, post-doctoral researcher at the University of Potsdam, Germany. 11 Ibragimov St., 050032, Almaty, Kazakhstan
Nurlan S. Tokmoldin, PhD in Organic Electronics (2011), at the time of preparing the manuscript Head of Laboratory of Photovoltaic Phenomena and Devices; сurrently, post-doctoral researcher at the University of Potsdam (Germany); 11 Ibragimov St., 050032, Almaty, Kazakhstan
Introduction. Heterojunction silicon solar cells represent one of the most promising directions for the development of solar photovoltaics. This is due to both their high power conversion efficiency and reasonable likelihood for further growth in performance, as well as good commercial potential of this technology, which relies on a transition from conventional diffusion-based processes to thin film deposition.
Aim. The paper describes results of optimization and fabrication of heterojunction silicon solar cells using the AK-1000 inline tool, adapted for processing of 6-inch wafers.
Materials and methods. In the manufacturing of solar cells, crystalline silicon wafers were subjected to wet chemical processes, and then electron, hole, and intrinsic types of conductivity of the layers based on amorphous silicon were deposited by plasma-chemical deposition. Precipitation of oxide transparent conductive layers was carried out by magnetron sputtering. To optimize the processes of obtaining solar cells, measurements of the reflection coefficient, of lifetime of minority carriers, and of current – voltage characteristics were used.
Results. As a result of the work, heterojunction solar cells were obtained in a laboratory in Kazakhstan with an efficiency of 20% without using of traditional diffusion processes for solar cells manufacturing.
Conclusions. The output parameters associated with light conversion efficiency demonstrate the possibility of further optimization of the parameters affecting the performance of heterojunction solar cells.
Introduction. Heterojunction silicon solar cells represent one of the most promising directions for the development of solar photovoltaics. This is due to both their high power conversion efficiency and reasonable likelihood for further growth in performance, as well as good commercial potential of this technology, which relies on a transition from conventional diffusion-based processes to thin film deposition.
Aim. The paper describes results of optimization and fabrication of heterojunction silicon solar cells using the AK-1000 inline tool, adapted for processing of 6-inch wafers.
Materials and methods. In the manufacturing of solar cells, crystalline silicon wafers were subjected to wet chemical processes, and then electron, hole, and intrinsic types of conductivity of the layers based on amorphous silicon were deposited by plasma-chemical deposition. Precipitation of oxide transparent conductive layers was carried out by magnetron sputtering. To optimize the processes of obtaining solar cells, measurements of the reflection coefficient, of lifetime of minority carriers, and of current – voltage characteristics were used.
Results. As a result of the work, heterojunction solar cells were obtained in a laboratory in Kazakhstan with an efficiency of 20% without using of traditional diffusion processes for solar cells manufacturing.
Conclusions. The output parameters associated with light conversion efficiency demonstrate the possibility of further optimization of the parameters affecting the performance of heterojunction solar cells.
The authors declare that there are no conflicts of interest present.