radioelectronicsИзвестия высших учебных заведений России. РадиоэлектроникаJournal of the Russian Universities. Radioelectronics1993-89852658-4794Saint Petersburg Electrotechnical University10.32603/1993-8985-2020-23-4-38-47radioelectronics-452Research ArticleКВАНТОВАЯ, ТВЕРДОТЕЛЬНАЯ, ПЛАЗМЕННАЯ И ВАКУУМНАЯ ЭЛЕКТРОНИКАQUANTUM, SOLID-STATE, PLASMA AND VACUUM ELECTRONICSPlasma Enhanced Chemical Vapor Deposited Materials and Organic Semiconductors in Photovoltaic DevicesPlasma Enhanced Chemical Vapor Deposited Materials and Organic Semiconductors in Photovoltaic DevicesKosarevА.KosarevA.

Andrey Kosarev, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielectrics" (1978), Professor Researcher at National Institute for Astrophysics, Optics and Electronics Dept., Puebla, 42840, Mexico

Andrey Kosarev, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielectrics" (1978), Professor Researcher at National Institute for Astrophysics, Optics and Electronics Dept., Puebla, 42840, Mexico

andrey-1409@mail.ruCosmeI.CosmeI.

Ismael Cosme, PhD from INAOE in 2013, Associated researcher, Optics and Electronics Dept., Puebla, 42840, Mexico

Ismael Cosme, PhD from INAOE in 2013, Associated researcher, Optics and Electronics Dept., Puebla, 42840, Mexico

ismaelcb@inaoep.mxMansurovaS.MansurovaS.

Svetlana Mansurova, PhD from National Institute for Astrophysics, Optics and Electronics (Mexico) in 1998. Titular Researcher, Optics and Electronics Dept., Puebla, 42840, Mexico

Svetlana Mansurova, PhD from National Institute for Astrophysics, Optics and Electronics (Mexico) in 1998. Titular Researcher, Optics and Electronics Dept., Puebla, 42840, Mexico

smansurova@inaoep.mxAndronikovD.AndronikovD.

Dmitriy Andronikov, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielectrics" (2013), 28 Polytechnicheskaya St., 194064, St Petersburg, Russia

Dmitriy Andronikov, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielectrics" (2013), 28 Polytechnicheskaya St., 194064, St Petersburg, Russia

d.andronikov@hevelsolar.comAbramovА.AbramovA.

Alexey Abramov, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielec-trics» (2001), 28 Polytechnicheskaya St., 194064, St Petersburg, Russia

Alexey Abramov, Cand. Sci. (Eng.) in Physics and Mathematics in the specialty of "Semiconductors and Dielec-trics» (2001), 28 Polytechnicheskaya St., 194064, St Petersburg, Russia

a.abramov@hevelsolar.comShakhrayI.ShakhrayI.

Igor Shakhray, CEO from Hevel LLC, Doctorant, 429950, Novocheboksarsk, Russia

Igor Shakhray, CEO from Hevel LLC, Doctorant, 429950, Novocheboksarsk, Russia

i.shakhray@hevelsolar.comTerukovEu.TerukovEu.

Eugeny Terukov, Dr. Sci. (Eng.) in Technical Sciences in the specialty of "Semiconductors and Dielectrics" (1996), Professor, Head of laboratory, 26 Polytechnicheskaya St., 194021, St Petersburg, Russia

Eugeny Terukov, Dr. Sci. (Eng.) in Technical Sciences in the specialty of "Semiconductors and Dielectrics" (1996), Professor, Head of laboratory, 26 Polytechnicheskaya St., 194021, St Petersburg, Russia

eug.terukov@mail.ioffe.ruNational Institute for Astrophysics, Optics and Electronics (INAOE)МексикаNational Institute for Astrophysics, Optics and Electronics (INAOE)MexicoCONACyT-INAOEМексикаCONACyT-INAOEMexicoR&D Center of Thin Film Technologies in Energetics LLC, (RDC TFTE); Ioffe Physics and technical InstituteРоссияR&D Center of Thin Film Technologies in Energetics LLC, (RDC TFTE); Ioffe Physics and technical InstituteRussian FederationSaint Petersburg Electrotechnical University "LETI"; Hevel LLCРоссияSaint Petersburg Electrotechnical University "LETI"; Hevel LLCRussian FederationR&D Center of Thin Film Technologies in Energetics LLC, (RDC TFTE); Ioffe Physics and technical Institute; Hevel LLCРоссияR&D Center of Thin Film Technologies in Energetics LLC, (RDC TFTE); Ioffe Physics and technical Institute; Hevel LLCRussian Federation2020071020202343847Copyright © Kosarev А., Cosme I., Mansurova S., Andronikov D., Abramov А., Shakhray I., Terukov E., 20202020Kosarev А., Cosme I., Mansurova S., Andronikov D., Abramov А., Shakhray I., Terukov E.Kosarev A., Cosme I., Mansurova S., Andronikov D., Abramov A., Shakhray I., Terukov E.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://re.eltech.ru/jour/article/view/452Introduction

Introduction. PECVD enables fabrication of wide range of advanced materials with various structure such as amorphous, polymorphous, nano-crystalline, nanostructured, microcrystalline etc. and with various electronic properties. The latter can be also changed by different dopingl. PECVD silicon materials are commercially employed in multi-layered PV structures (including ones on flexible substrates). Combining these materials with crystalline silicon active substrate resulted in significant improvement of PCE in hetero junction technology PV structures. Existence of new organic semiconductors (OS) together with understanding of physical properties resulted in fast development of OC PV devices.

Aim

Aim. To consider both PECVD and OS materials and to present description of fabrication, structure and electronic properties for device application.

Materials and methods

Materials and methods. Devices based on non-crystalline materials, devices based on OS, hybrid devices. PECVD and Spin coating technique was used to deposit materials with tunable properties enabling device engineering possibilities.

Results

Results. PECVD and OS materials were analyzed. These materials have different levels of characterization (data volume, interpretation of the results etc.) and of understanding of physics determining device performance. Some examples of these materials in PV including structures with crystalline silicon were considered.

Conclusion

Conclusion. Important advantage of both PECVD and OS materials is that fabrication methods are compatible and allow fabrication of great variety of hybrid device structures on crystalline semiconductors. Advantages of such devices are difficult to predict because of lack of data in scientific literature. However a new area in material science and related devices for further exploring and exploiting has appeared.

Introduction

Introduction. PECVD enables fabrication of wide range of advanced materials with various structure such as amorphous, polymorphous, nano-crystalline, nanostructured, microcrystalline etc. and with various electronic properties. The latter can be also changed by different dopingl. PECVD silicon materials are commercially employed in multi-layered PV structures (including ones on flexible substrates). Combining these materials with crystalline silicon active substrate resulted in significant improvement of PCE in hetero junction technology PV structures. Existence of new organic semiconductors (OS) together with understanding of physical properties resulted in fast development of OC PV devices

Aim

Aim. To consider both PECVD and OS materials and to present description of fabrication, structure and electronic properties for device application.

Materials and methods

Materials and methods. Devices based on non-crystalline materials, devices based on OS, hybrid devices. PECVD and Spin coating technique was used to deposit materials with tunable properties enabling device engineering possibilities.

Results

Results. PECVD and OS materials were analyzed. These materials have different levels of characterization (data volume, interpretation of the results etc.) and of understanding of physics determining device performance. Some examples of these materials in PV including structures with crystalline silicon were considered.

Conclusion

Conclusion. Important advantage of both PECVD and OS materials is that fabrication methods are compatible and allow fabrication of great variety of hybrid device structures on crystalline semiconductors. Advantages of such devices are difficult to predict because of lack of data in scientific literature. However a new area in material science and related devices for further exploring and exploiting has appeared.

PECVD materialsplasma depositionorganic semiconductorsphotovoltaic deviceshybrid photovoltaic devicesPECVD materialsplasma depositionorganic semiconductorsphotovoltaic deviceshybrid photovoltaic devicesThe authors would like greatly appreciate Dr.Y.Kudriavtsev (CINVESTV, Mexico) for many years of collaboration in application of advanced SIMS techniques to study non-crytalline materials, We would like to thank our PhD students Hiram Martinez (Electronics department of INAOE), Antonio J. Olivares-Vargas (Optics department of INAOE) for their dedication to work with both PECVD and organic semiconductors for PV devices and possibility to use their data, also many thanks to engineer Adrian Itzmoyotl for his technical service during fabrication of materials and devices.The authors would like greatly appreciate Dr.Y.Kudriavtsev (CINVESTV, Mexico) for many years of collaboration in application of advanced SIMS techniques to study non-crytalline materials, We would like to thank our PhD students Hiram Martinez (Electronics department of INAOE), Antonio J. Olivares-Vargas (Optics department of INAOE) for their dedication to work with both PECVD and organic semiconductors for PV devices and possibility to use their data, also many thanks to engineer Adrian Itzmoyotl for his technical service during fabrication of materials and devices.ReferencesKrebs Frederik C. Fabrication and processing of polymer solar cells: A review of printing and coating techniques. 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The authors declare that there are no conflicts of interest present.