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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">radioelectronics</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений России. Радиоэлектроника</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of the Russian Universities. Radioelectronics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1993-8985</issn><issn pub-type="epub">2658-4794</issn><publisher><publisher-name>Saint Petersburg Electrotechnical University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32603/1993-8985-2019-22-4-31-44</article-id><article-id custom-type="elpub" pub-id-type="custom">radioelectronics-352</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ОРИГИНАЛЬНАЯ СТАТЬЯ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ORIGINAL ARTICLE</subject></subj-group></article-categories><title-group><article-title>Широкополосный волноводно-микрополосковый переход для частотного диапазона 60 ГГЦ</article-title><trans-title-group xml:lang="en"><trans-title>Design of Wideband Waveguide-to-Microstrip Transition for 60 GHz Frequency Band</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-9827-6720</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Можаровский</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Mozharovskiy</surname><given-names>Andrei V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>старший инженер по СВЧ-устройствам и антенной технике</p></bio><bio xml:lang="en"><p>Senior microwave systems and antennas engineer </p></bio><email xlink:type="simple">andrey.mozharovskiy@radiogigabit.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Артеменко</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Artemenko</surname><given-names>Aleksey A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>кандидат технических наук (2013), директор по исследованиям и разработкам</p></bio><bio xml:lang="en"><p>Cand. Sci. (Engineering) (2013), R&amp;D director</p></bio><email xlink:type="simple">alexey.artemenko@radiogigabit.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Масленников</surname><given-names>Р. О.</given-names></name><name name-style="western" xml:lang="en"><surname>Maslennikov</surname><given-names>Roman O.</given-names></name></name-alternatives><bio xml:lang="ru"><p>кандидат физико-математических наук (2012), генеральный директор</p></bio><bio xml:lang="en"><p>Cand. Sci. (Phys.-Math.) (2012), CEO</p></bio><email xlink:type="simple">roman.maslennikov@radiogigabit.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-5632-1223</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Вендик</surname><given-names>И. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Vendik</surname><given-names>Irina B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>доктор технических наук (1991), профессор (1993) кафедры микрорадиоэлектроники и технологии радиоаппаратуры, руководитель лаборатории СВЧ-микроэлектроники</p></bio><bio xml:lang="en"><p>Dr. Sci. (Engineering) (1991), Professor (1993) of the Department of Microradioelectronics and Radio Technology, Head of the Laboratory of Microwave Microelectronics</p></bio><email xlink:type="simple">ibvendik@rambler.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>ООО "Радио Гигабит"</institution><country>Россия</country></aff><aff xml:lang="en"><institution>LLC "Radio Gigabit"</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Saint Petersburg Electrotechnical University "LETI"</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>01</day><month>10</month><year>2019</year></pub-date><volume>22</volume><issue>4</issue><fpage>31</fpage><lpage>44</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Можаровский А.В., Артеменко А.А., Масленников Р.О., Вендик И.Б., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Можаровский А.В., Артеменко А.А., Масленников Р.О., Вендик И.Б.</copyright-holder><copyright-holder xml:lang="en">Mozharovskiy A.V., Artemenko A.A., Maslennikov R.O., Vendik I.B.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://re.eltech.ru/jour/article/view/352">https://re.eltech.ru/jour/article/view/352</self-uri><abstract><sec><title>Введение</title><p>Введение. Частотный диапазон вблизи 60 ГГц – один из наиболее перспективных для создания высокоскоростных систем связи нового поколения за счет использования широкой полосы частот передаваемых сигналов, существенно превышающей доступные значения до 6 ГГц в традиционных частотных диапазонах. Активное развитие систем связи диапазона около 60 ГГц подкрепляется расширением многообразия соответствующих полупроводниковых компонентов и планарных устройств, реализуемых на СВЧ печатных платах и имеющих интерфейс на основе микрополосковых линий передачи. Для измерения и отладки полупроводниковых компонентов и планарных устройств возникает необходимость их соединения с волноводным интерфейсом измерительного оборудования, что может быть выполнено с помощью волноводно-микрополоскового перехода.</p></sec><sec><title>Цель работы</title><p>Цель работы. Разработка и исследование планарного широкополосного волноводно-микрополоскового перехода для частотного диапазона около 60 ГГц, обеспечивающего малый уровень вносимых потерь.</p></sec><sec><title>Материалы и методы</title><p>Материалы и методы. Для достижения поставленной цели проанализировано влияние неоднородностей в структуре перехода на его характеристики, а также исследованы методы устранения таких неоднородностей. Анализ влияния неоднородностей и расчет характеристик разработанного перехода выполнены с помощью электродинамического моделирования и подтверждены результатами экспериментального исследования изготовленных образцов широкополосного волноводно-микрополоскового перехода.</p></sec><sec><title>Результаты</title><p>Результаты. Разработанный переход основан на электромагнитном взаимодействии через щелевую апертуру в экране микрополосковой линии и не содержит в своей структуре слепых переходных отверстий, часто применяемых для переходов миллиметрового диапазона частот, но значительно увеличивающих сложность и стоимость изготовления. Переход выполнен с возможностью непосредственного подсоединения к отрезку прямоугольного волновода стандартного сечения WR-15 без дополнительных модификаций в структуре волновода. По результатам моделирования и экспериментального исследования полоса пропускания перехода равна полной полосе пропускания волновода WR-15, а именно 50...75 ГГц по уровню –2 дБ коэффициента прохождения, а потери, вносимые в передаваемый сигнал, не превышают 0.8 дБ на частоте 60 ГГц.</p></sec><sec><title>Заключение</title><p>Заключение. Широкая полоса пропускания сигнала, небольшие потери, устойчивость к неточностям изготовления и простота интеграции позволяют использовать волноводно-микрополосковый переход для соединения различных микрополосковых и волноводных устройств миллиметрового диапазона длин волн.</p></sec></abstract><trans-abstract xml:lang="en"><sec><title>Introduction</title><p>Introduction. The frequency band around 60 GHz is one of the most promising to realize new generation communication systems with high data rate due to the utilization of a wide operational frequency band that significantly exceeds traditional frequency bands below 6 GHz. High interest in the development of 60 GHz communication systems is related to the recent evolution of MMIC technology that allows creating effective components for this band and the variety of planar devices. Both are typically realized on printed circuit boards and have interfaces that are based on microstrip lines. The wideband waveguide-to-microstrip transition is required to test various active and passive planar devices with microstrip interfaces in order to provide an effective interconnection between the standard waveguide interface of measurement equipment and planar microstrip structures.</p></sec><sec><title>Objective</title><p>Objective. The paper deals with the design of planar wideband waveguide-to-microstrip transition with low insertion loss level in the 60 GHz frequency band.</p></sec><sec><title>Materials and methods</title><p>Materials and methods. The main objective is achieved by analyzing of discontinuities in waveguide-tomicrostrip transition structure and their influence on transition characteristics. The transition characteristics are analyzed using full-wave electromagnetic simulation and confirmed with experimental investigation of designed wideband waveguide-to-microstrip transition samples.</p></sec><sec><title>Results</title><p>Results. The designed transition is based on an electromagnetic coupling through a slot aperture in a microstrip line ground plane. The transition is performed without using blind vias in its structure that provides low production cost and al-lows integrating the WR-15 rectangular waveguide in a simple manner without any modifications in the waveguide structure. Results of the electromagnetic simulation are confirmed with experimental investigations of the fabricated waveguide-to-microstrip transition samples. The designed transition provides operation in the nominal bandwidth of the WR-15 waveguide, namely, 50…75 GHz with the insertion loss level of 2 dB and with less than 0.8 dB insertion loss level at the 60 GHz frequency.</p></sec><sec><title>Conclusion</title><p>Conclusion. The designed waveguide-to-microstrip transition can be considered as an effective solution for interconnection between various waveguide and microstrip millimeter-wave devices due to its wideband performance, low insertion loss level, simple integration and robustness to the manufacturing tolerances structure.</p></sec></trans-abstract><kwd-group xml:lang="ru"><kwd>миллиметровый диапазон длин волн</kwd><kwd>волноводно-микрополосковый переход</kwd><kwd>печатная плата</kwd><kwd>металлический волновод</kwd></kwd-group><kwd-group xml:lang="en"><kwd>millimeter wave band</kwd><kwd>waveguide-to-microstrip transition</kwd><kwd>printed circuit board</kwd><kwd>hollow metal waveguide</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">802.11–2016 – IEEE Standard for Information technology – Telecommunications and Information Exchange between Systems Local and Metropolitan Area Networks – Specific requirements. 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