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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">radioelectronics</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений России. Радиоэлектроника</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of the Russian Universities. Radioelectronics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1993-8985</issn><issn pub-type="epub">2658-4794</issn><publisher><publisher-name>Saint Petersburg Electrotechnical University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32603/1993-8985-2019-22-3-88-96</article-id><article-id custom-type="elpub" pub-id-type="custom">radioelectronics-327</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МИКРО- И НАНОЭЛЕКТРОНИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICRO- AND NANOELECTRONICS</subject></subj-group></article-categories><title-group><article-title>ВЛИЯНИЕ ТЕМПЕРАТУРЫ ТЕРМИЧЕСКОГО ВОССТАНОВЛЕНИЯ НА СТРУКТУРУ И ЭЛЕКТРОФИЗИЧЕСКИЕ СВОЙСТВА ПЛЕНОК ВОССТАНОВЛЕННОГО ОКСИДА ГРАФЕНА</article-title><trans-title-group xml:lang="en"><trans-title>THE INFLUENCE OF THE THERMAL REDUCTION TEMPERATURE ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF REDUCED GRAPHENE OXIDE FILMS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-4881-3209</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Корнилов</surname><given-names>Д. Ю.</given-names></name><name name-style="western" xml:lang="en"><surname>Kornilov</surname><given-names>Denis Yu.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Корнилов Денис Юрьевич – кандидат технических наук (2008), заведующий лабораторией ООО "АкКо Лаб". Автор 36 научных публикаций. Сфера научных интересов – неорганическая химия и электрохимия.</p><p>ул. Гиляровского, д. 65, стр. 1, Москва, 129110</p></bio><bio xml:lang="en"><p>Denis Yu. Kornilov – Cand. of Sci. (Engineering) (2008), Head of laboratory of LLC "AkKo Lab". The author of 36 scientific publications. Area of expertise: inorganic chemistry and electrochemistry.</p><p>65/1, Gilyarovskogo Str., 129110, Moscow </p></bio><email xlink:type="simple">kornilovdenis@rambler.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>ООО "АкКо Лаб"</institution><country>Россия</country></aff><aff xml:lang="en"><institution>LLC "AkKo Lab"</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>02</day><month>07</month><year>2019</year></pub-date><volume>22</volume><issue>3</issue><fpage>88</fpage><lpage>96</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Корнилов Д.Ю., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Корнилов Д.Ю.</copyright-holder><copyright-holder xml:lang="en">Kornilov D.Y.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://re.eltech.ru/jour/article/view/327">https://re.eltech.ru/jour/article/view/327</self-uri><abstract><p>Введение. Высокая электропроводность, теплопроводность, прочность, большая площадь поверхности, высокий коэффициент светопропускания – это лишь неполный перечень свойств графена – материала, являющегося весьма перспективным с точки зрения применения в микро- и наноэлектронике. Кроме того, к преимуществам графена можно отнести возможность его получения различными способами. Это позволяет, используя соответствующие технологические приемы, создавать материалы с заданными физико-химическими характеристиками. Цель работы. Исследование степени влияния температуры термического восстановления на физикохимические свойства пленок оксида графена (ОГ). Материалы и методы. В описываемой работе пленки ОГ были получены на поверхности предметного стекла посредством его погружения и извлечения из водной дисперсии оксида графена (dip coating). Полученные образцы были охарактеризованы методом сканирующей электронной микроскопии, спектроскопии комбинационного рассеяния света, элементного CHN-анализа. Удельное поверхностное электрическое сопротивление было измерено четырехзондовым методом. Результаты. Установлено отличие содержания элементов (C, H, N) в исследуемых образцах, снижение дефектности в графеновой структуре, а также уменьшение удельного электрического сопротивления пропорционально увеличению температуры восстановления. Также обнаружено уменьшение толщины пленок ОГ при термической обработке, что предположительно связано с потерей функциональных групп в ОГ при его термическом восстановлении. Заключение. Результаты исследований демонстрируют возможность получения углеродных пленок из восстановленного оксида графена (ВОГ) с заданными физико-химическими характеристиками, которые могут найти применение в тонкопленочных технологиях. Представленные материалы также могут быть полезны исследователям в вопросах получения и применения ОГ и ВОГ.</p></abstract><trans-abstract xml:lang="en"><p>Introduction. An incomplete list of graphene properties includes high electric conductivity, thermal conductivity, strength, large surface area, high light transmittance. Graphene is a very promising material from the point of view of its application in micro- and nanoelectronics. In addition, graphene advantage is a possibility of its obtaining by various ways. It allows creating materials with desired physicochemical properties by using appropriate technological methods. Objective. The investigation of a thermal reduction temperature influence on physicochemical properties of graphene oxide (GO) films. Materials and methods. In the present work, GO films are obtained on a slide surface by its immersing and removing from a graphene oxide water dispersion (dip coating). Obtained samples are studied by methods of scanning electron microscopy, Raman spectroscopy, and elemental CHN analysis. A sheet resistance is measured by a four-point probes method. Results. A content difference of elements (C, H, N) in studied samples, and both graphene structure defectiveness and sheet resistance decrease, are found to be proportional to a reduction temperature increase. A GO films thickness decrease during a heat treatment is also observed, which is presumably associated with a functional GO groups loss while thermal reduction. Conclusion. Research results demonstrate a possibility of a carbon films with desired physicochemical properties obtaining from a reduced graphene oxide (RGO), which can be used in thin-film technologies. Presented materials can also be useful in issues related to GO and RGO obtaining and applying.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>оксид графена</kwd><kwd>восстановленный оксид графена</kwd><kwd>тонкослойные пленки</kwd></kwd-group><kwd-group xml:lang="en"><kwd>graphene oxide</kwd><kwd>reduced graphene oxide</kwd><kwd>multilayer films</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Морозов С. В., Новоселов К. С., Гейм А. К. Электронный транспорт в графене // УФН. 2008. Т. 178, № 7. С. 776–780. doi: 10.3367/UFNr.0178.200807i.0776</mixed-citation><mixed-citation xml:lang="en">Morozov S. V., Novoselov K. S., Geim A. K. Electronic Transport in Graphene. 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