<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">radioelectronics</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений России. Радиоэлектроника</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of the Russian Universities. Radioelectronics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1993-8985</issn><issn pub-type="epub">2658-4794</issn><publisher><publisher-name>Saint Petersburg Electrotechnical University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32603/1993-8985-2018-21-2-26-36</article-id><article-id custom-type="elpub" pub-id-type="custom">radioelectronics-217</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ПРОЕКТИРОВАНИЕ И ТЕХНОЛОГИЯ РАДИОЭЛЕКТРОННЫХ СРЕДСТВ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ENGINEERING DESIGN AND TECHNOLOGIES OF RADIO ELECTRONIC FACILITIES</subject></subj-group></article-categories><title-group><article-title>Механизмы формирования гетерофазных сегнетоэлектрических пленок цирконата-титаната свинца</article-title><trans-title-group xml:lang="en"><trans-title>Formation Mechanisms for Hetero-Phase Ferroelectric Films of Lead Zirconate Titanate</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мухин</surname><given-names>Н. B.</given-names></name><name name-style="western" xml:lang="en"><surname>Mukhin</surname><given-names>N. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Мухин Николай Вячеславович – кандидат технических наук, доцент кафедры квантовой электроники и оптико-электронных приборов </p><p>ул. Профессора Попова, д. 5, Санкт-Петербург, 197376</p></bio><bio xml:lang="en"><p>Nikolay V. Mukhin – Ph.D. in Engineering, Associate Professor of the Department of Quantum Electronic and Optics Electronic Devices </p><p>5, Professor Popov Str., 197376, St. Petersburg</p></bio><email xlink:type="simple">muhinnv_leti@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Еланская</surname><given-names>К. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Elanskaia</surname><given-names>K. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Еланская Кристина Геннадьевна – студентка 1-го курса магистратуры, инженер кафедры квантовой электроники и оптико-электронных приборов </p><p>ул. Профессора Попова, д. 5, Санкт-Петербург, 197376</p></bio><bio xml:lang="en"><p>Kristina G. Elanskaia – Bachelor’s Degree in Electronics and Nanoelectronics, 1st year Master’s Degree student, engineer at the Department of Quantum Electronic and Optics Electronic Devices </p><p>5, Professor Popov Str., 197376, St. Petersburg</p></bio><email xlink:type="simple">k.elans@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Пухова</surname><given-names>В. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Pukhova</surname><given-names>V. M.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Пухова Валентина Михайловна – Ph.D. (Миланский университет). Ассистент кафедры квантовой электроники и оптико-электронных приборов </p><p>ул. Профессора Попова, д. 5, Санкт-Петербург, 197376</p></bio><bio xml:lang="en"><p>Valentina M. Pukhova – Ph.D. (2015) of University of Milan. Assistant Professor of the Department of Quantum Electronic and Optics Electronic Devices </p><p>5, Professor Popov Str., 197376, St. Petersburg</p></bio><email xlink:type="simple">pukhovavalentina@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Тарасов</surname><given-names>С. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Tarasov</surname><given-names>S. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Тарасов Сергей Анатольевич – доктор технических наук, заведующий кафедрой квантовой электроники и оптико-электронных приборов </p><p>ул. Профессора Попова, д. 5, Санкт-Петербург, 197376</p></bio><bio xml:lang="en"><p>Sergey A. Tarasov – D.Sc. in Engineering, Chief of the Department of Quantum Electronic and Optics Electronic Devices </p><p>5, Professor Popov Str., 197376, St. Petersburg</p></bio><email xlink:type="simple">SATarasov@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Воротилов</surname><given-names>К. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Vorotilov</surname><given-names>K. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Воротилов Константин Анатольевич – доктор технических наук, профессор кафедры наноэлектроники, директор НОЦ "Технологический центр"</p><p>пр. Вернадского, д. 78, Москва, 119454</p></bio><bio xml:lang="en"><p>Konstantin A. Vorotilov – D.Sc. in Engineering), Professor of the Department of Nanoelectronics in Moscow Technological University, head of SEC "Technological Center". </p><p>78, Vernadskogo Pr., 119454, Moscow, Russia</p></bio><email xlink:type="simple">vorotilov@mirea.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Руденко</surname><given-names>М. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Rudenko</surname><given-names>M. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Руденко Мария Владимировна – магистр по специальности "Нанотехнологии и наноматериалы (в электронике)", научный сотрудник НИЛ "Нанофотоника" НИЧ </p><p>ул. П. Бровки, д. 6, Минск, 220013</p></bio><bio xml:lang="en"><p>Mariya V. Rudenko – Master’s Degree in Nanotechnologies and Nanomaterials (in Electronics), postgraduate student. Research Associate in the University Nanophotonics Laboratory </p><p>6, Petrusya Bbrovki Str., 220013, Minsk, Republic of Belarus</p></bio><email xlink:type="simple">rudmash@gmail.com</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ермачихин</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Ermachikhin</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Ермачихин Александр Валерьевич – кандидат физико-математических наук, доцент кафедры микро- и наноэлектроники </p><p>ул. Гагарина, д. 59, Рязань, 390005</p></bio><bio xml:lang="en"><p>Aleksandr V. Ermachikhin – Ph.D. in Physics and Mathematics. Senior scientist, Associate Professor of the Department of Micro-and Nanoelectronics </p><p>59, Gagarin Str., 390005, Ryazan, Russia</p></bio><email xlink:type="simple">al.erm@mail.ru</email><xref ref-type="aff" rid="aff-4"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Saint Petersburg Electrotechnical University "LETI"</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Московский технологический университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Moscow Technological University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution><country>Беларусь</country></aff><aff xml:lang="en"><institution>Belorussian State University of Informatics and Radioelectronics</institution><country>Belarus</country></aff></aff-alternatives><aff-alternatives id="aff-4"><aff xml:lang="ru"><institution>Рязанский государственный радиотехнический университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Ryazan State Radio Engineering University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2018</year></pub-date><pub-date pub-type="epub"><day>28</day><month>04</month><year>2018</year></pub-date><volume>0</volume><issue>2</issue><fpage>26</fpage><lpage>36</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Мухин Н.B., Еланская К.Г., Пухова В.М., Тарасов С.А., Воротилов К.А., Руденко М.В., Ермачихин А.В., 2018</copyright-statement><copyright-year>2018</copyright-year><copyright-holder xml:lang="ru">Мухин Н.B., Еланская К.Г., Пухова В.М., Тарасов С.А., Воротилов К.А., Руденко М.В., Ермачихин А.В.</copyright-holder><copyright-holder xml:lang="en">Mukhin N.V., Elanskaia K.G., Pukhova V.M., Tarasov S.A., Vorotilov K.A., Rudenko M.V., Ermachikhin A.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://re.eltech.ru/jour/article/view/217">https://re.eltech.ru/jour/article/view/217</self-uri><abstract><p>Проведено экспериментальное и теоретическое изучение процессов образования включений "примесных" фаз в сегнетоэлектрических оксидах на примере поликристаллических пленок цирконата-титаната свинца (ЦТС). Особенностью данных составов является сравнительно высокая летучесть оксидов свинца, что может приводить к дефициту этих компонентов в составе формируемой сегнетоэлектрической пленки в ходе высокотемпературной кристаллизации. Чтобы избежать потери свинца, в процессе синтеза в раствор добавляют его некоторый избыток. Экспериментальные образцы пленок ЦТС были получены золь-гель-методом с различным содержанием оксида свинца, кристаллизация сегнетоэлектрической фазы пленок осуществлялась на воздухе при температуре 600 °C. В пленках обнаружены включения примесной фазы оксида свинца, получено распределение включений по размерам. Изложены модельные представления и предложена система уравнений, описывающие кинетику образования дисперсных включений новых фаз различного стехиометрического состава на границах раздела в поликристаллических пленках многокомпонентных сегнетоэлектрических оксидов за счет процессов объемной диффузии и зернограничной сегрегации. Сопоставление экспериментальных данных с теоретической моделью дало согласие на качественном уровне. Общность подхода позволяет распространить модель на другие системы многокомпонентных сегнетоэлектрических поликристаллических материалов.</p></abstract><trans-abstract xml:lang="en"><p>An experimental and theoretical study of the formation processes of "impurity" phase inclusions in ferroelectric oxides is carried out via example of polycrystalline lead zirconate-titanate (PZT) films. A feature of these compositions is relatively high volatility of lead oxides, which can lead to deficiency of these components in the composition of the ferroelectric film formed during high-temperature crystallization. To avoid lead losses, some excess is added to the solution in the process of synthesis. Experimental samples of PZT films are obtained using sol-gel method with different contents of lead oxide, the crystallization of the ferroelectric phase of the films is carried out in air at 600 °C. In the films, the inclusions of lead oxide impurity phase are found, and the size distribution of these inclusions are obtained. Model concepts are presented and a system of equations is proposed describing the dispersed inclusions formation kinetics of new phases of different stoichiometric composition at the interfaces in polycrystalline films of multicomponent ferroelectric oxides due to bulk diffusion and grain-boundary segregation. Comparison of the experimental data with the theoretical model gives qualitative agreement. The approach generality makes it possible to extend the model to other systems of multicomponent ferroelectric polycrystalline materials.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>цирконат-титанат свинца</kwd><kwd>оксид свинца</kwd><kwd>перовскиты</kwd><kwd>поликристаллические пленки</kwd><kwd>дисперсные включения</kwd><kwd>нестехиометрия</kwd></kwd-group><kwd-group xml:lang="en"><kwd>lead zirconate titanate</kwd><kwd>lead oxide</kwd><kwd>perovskites</kwd><kwd>polycrystalline films</kwd><kwd>dispersed inclusions</kwd><kwd>nonstoichiometry</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Российский фонд фундаментальных исследований (грант № 17-52-04127).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Физика сегнетоэлектриков: современный взгляд / пер. с англ.; под ред. К. М. Рабе, Ч. Г. Анна, Ж. М. Трискона. М.: БИНОМ. 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