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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">radioelectronics</journal-id><journal-title-group><journal-title xml:lang="ru">Известия высших учебных заведений России. Радиоэлектроника</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of the Russian Universities. Radioelectronics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1993-8985</issn><issn pub-type="epub">2658-4794</issn><publisher><publisher-name>Saint Petersburg Electrotechnical University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.32603/1993-8985-2025-28-4-86-98</article-id><article-id custom-type="elpub" pub-id-type="custom">radioelectronics-1054</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МИКРО- И НАНОЭЛЕКТРОНИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MICRO- AND NANOELECTRONICS</subject></subj-group></article-categories><title-group><article-title>Гидротермальный синтез и сенсорные свойства гидроксостанната цинка</article-title><trans-title-group xml:lang="en"><trans-title>Hydrothermal Synthesis and Gas Sensing Properties of Zinc Hydroxostannate</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-0195-8870</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Максимов</surname><given-names>А. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Maximov</surname><given-names>A. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Максимов Александр Иванович – кандидат физико-математических наук (2005), доцент (2008), доцент кафедры микро- и наноэлектроники </p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Alexander I. Maximov, Cand. Sci. (Phys.-Math.) (2005), Associate Professor (2008), Associate Professor ofthe Department of Micro- and Nanoelectronics</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">aimaximov@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-3065-3961</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Налимова</surname><given-names>С. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Nalimova</surname><given-names>S. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Налимова Светлана Сергеевна – кандидат физико-математических наук (2013), доцент (2024), доцент кафедры микро- и наноэлектроники</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Svetlana S. Nalimova, Cand. Sci. (Phys.-Math.) (2013), Associate Professor (2024), Associate Professor of theDepartment of Micro- and Nanoelectronics</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">sskarpova@list.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Левкевич</surname><given-names>Е. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Levkevich</surname><given-names>E. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Левкевич Екатерина Алексеевна – магистр по направлению "Электроника и наноэлектроника" (2020, Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)), инженер кафедры микро- и наноэлектроники</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Ekaterina A. Levkevich, Master in Electronics and Nanoelectronics (2020, Saint Petersburg ElectrotechnicalUniversity). Engineer of the Department of Micro- and Nanoelectronics</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">levek26@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-5738-2626</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Шомахов</surname><given-names>З. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Shomakhov</surname><given-names>Z. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Шомахов Замир Валериевич – кандидат физико-математических наук (2012), доцент (2022), директор Института электроники, робототехники и искусственного интеллекта</p><p>ул. Чернышевского, д. 173, Нальчик, 360004</p></bio><bio xml:lang="en"><p>Zamir V. Shomakhov, Cand. Sci. (Phys.-Math.) (2012), Associate Professor (2022), Director of the Institute of Electronics, Robotics and Artificial Intelligence</p><p>173, Chernyshevsky St., Nalchik 360004</p></bio><email xlink:type="simple">shozamir@yandex.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-7912-6033</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кириллова</surname><given-names>С. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Kirillova</surname><given-names>S. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Кириллова Светлана Анатольевна – магистр по направлению "Химическая технология и биотехнология" (Санкт-Петербургский государственный технологический институт (Технический университет), 2004), старший преподаватель кафедры физической химии</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Svetlana A. Kirillova, Master in Chemical Engineering and Biotechnology (Saint Petersburg State Technological Institute (Technical University), 2004), Senior Lecturer of the Department of Physical Chemistry</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">refractory-sveta@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-6500-5492</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мошников</surname><given-names>В. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Moshnikov</surname><given-names>V. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Мошников Вячеслав Алексеевич – доктор физико-математических наук (1997), профессор (1999), профессор кафедры микро- и наноэлектроники</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Vyacheslav A. Moshnikov, Dr Sci. (Phys.-Math.) (1997), Professor (1999), Professor of the Department ofMicro- and Nanoelectronics</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">vamoshnikov@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-6721-4159</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Соломонов</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Solomonov</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Соломонов Александр Васильевич − доктор физико-математических наук (2000), профессор (2002), профессор кафедры микро- и наноэлектроники</p><p>ул. Профессора Попова, д. 5 Ф, Санкт-Петербург, 197022</p></bio><bio xml:lang="en"><p>Alexander V. Solomonov, Dr Sci. (Phys.-Math.) (2000), Professor (2002), Professor of Department of Microand Nanoelectronics</p><p>5 F, Professor Popov St., St Petersburg 197022</p></bio><email xlink:type="simple">alexander.v.solomonov@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В. И. Ульянова (Ленина)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Saint Petersburg Electrotechnical University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Кабардино-Балкарский государственный университет&#13;
им. Х. М. Бербекова</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Kabardino-Balkarian State University n. a. H. M. Berbekov</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>09</day><month>10</month><year>2025</year></pub-date><volume>28</volume><issue>4</issue><elocation-id>86–98</elocation-id><permissions><copyright-statement>Copyright &amp;#x00A9; Максимов А.И., Налимова С.С., Левкевич Е.А., Шомахов З.В., Кириллова С.А., Мошников В.А., Соломонов А.В., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Максимов А.И., Налимова С.С., Левкевич Е.А., Шомахов З.В., Кириллова С.А., Мошников В.А., Соломонов А.В.</copyright-holder><copyright-holder xml:lang="en">Maximov A.I., Nalimova S.S., Levkevich E.A., Shomakhov Z.V., Kirillova S.A., Moshnikov V.A., Solomonov A.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://re.eltech.ru/jour/article/view/1054">https://re.eltech.ru/jour/article/view/1054</self-uri><abstract><p>Введение. В настоящее время актуальной задачей в области газовой сенсорики является улучшение характеристик (сенсорный отклик и быстродействие), а также снижение рабочих температур. Для этих целей исследуются многокомпонентные оксидные системы. Одними из наиболее перспективных материалов являются различные модификации системы Zn–Sn–O.Цель работы. Разработка методик гидротермального синтеза наночастиц гидроксостанната цинка, отличающихся используемыми прекурсорами. На основе синтезированных наночастиц сформированы и протестированы активные слои газовых сенсоров.Материалы и методы. Наночастицы гидроксостанната цинка получены гидротермальным синтезом в течение 6 часов при 90 °С. Были выбраны две методики с использованием различных прекурсоров. Полученные образцы проанализированы с помощью растровой электронной микроскопии, рентгеновского фазового анализа, рентгеновской фотоэлектронной спектроскопии. По результатам спектрофотометрии определена ширина запрещенной зоны образцов. Газочувствительные свойства исследованы при различных условиях (целевой газ, температура, дополнительное воздействие УФ-излучения).Результаты. Комплексное исследование синтезированных структур показало, что в зависимости от используемой методики получения характер их взаимодействия с целевыми газами является принципиально разным. Так, образцы ZnSn(OH)6_1 проявляют отклик при комнатной температуре и обладают высоким быстродействием. Это связано с тем, что на их поверхности преобладают ионы цинка. Для образцов ZnSn(OH)6_2, на поверхности которых преобладают ионы олова, окруженные ОН-группами, отклик при комнатной температуре возможен только с дополнительной активацией УФ-излучением. При этом время отклика и время восстановления составляют порядка сотен секунд.Заключение. В статье продемонстрированы возможности использования наночастиц гидроксостанната цинка, полученных гидротермальным методом, для газовых сенсоров, работающих при комнатной температуре. При этом решающим фактором является выбор методики синтеза.</p></abstract><trans-abstract xml:lang="en"><p>Introduction. Currently in gas sensing there is an urgent need to improve performance, including sensor response and speed, as well as to reduce operating temperatures. To achieve these goals, multicomponent oxide systems are being studied. Various modifications of Zn–Sn–O system are among the most promising materials.Aim. To develop techniques for the hydrothermal preparation of zinc hydroxostannate nanoparticles using different precursors. Active layers for gas sensors were created and tested using these synthesized nanoparticles.Materials and methods. Zinc hydroxostannate nanoparticles were synthesized using hydrothermal methods for 6 hours at a temperature of 90 °C. Two techniques using different precursors were used to obtain the samples. The samples were then analyzed using scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. Based on the optical spectroscopy results, the band gap of zinc hydroxostannate was determined. Gas sensing properties of the nanoparticles were investigated under different conditions, including target gases, temperatures, and exposure to UV radiation.Results. A comprehensive study of the synthesized structures has shown that the nature of their interaction with target gases is different depending on the synthesis technique. Specifically, ZnSn(OH)6_1 samples demonstrate a response at room temperature and are highly rapid. This is attributed to the predominance of zinc ions on their surface. In contrast, ZnSn(OH)6_2 samples, with a surface rich in tin ions surrounded by OH groups, require additional activation by UV radiation to achieve a response at room temperature. At the same time, the response and recovery times are in the order of hundreds of seconds.Conclusion. The paper explores the potential of using zinc hydroxostannate nanoparticles created through the hydrothermal process for room temperature gas sensors. The key factor in this study is the selection of the synthesis technique.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>гидроксостаннат цинка</kwd><kwd>наночастицы</kwd><kwd>газовые сенсоры</kwd><kwd>гидротермальный синтез</kwd><kwd>рентгеновская фотоэлектронная спектроскопия</kwd></kwd-group><kwd-group xml:lang="en"><kwd>zinc hydroxostannate</kwd><kwd>nanoparticles</kwd><kwd>gas sensors</kwd><kwd>hydrothermal synthesis</kwd><kwd>X-ray photoelectron spectroscopy</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Gas sensors and factors influencing sensing mechanism with a special focus on MOS sensors / D. Y. Nadargi, A. Umar, J. D. Nadargi, S. A. Lokare, S. Akbar, I. S. Mulla, S. S. Suryavanshi, N. L. Bhandari, M. G. 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