Investigation of temperature dependent current–voltage characteristics of Ba0.5Sr0.5TiO3 thin films
The Ba0.5Sr0.5TiO3 (BST) thin films were deposited via radio frequency cathode sputtering on sapphire (α-Al2O3) and gadolinium gallium garnet (GGG) substrates. The effect of substrate material on the leakage current and mechanism of conductivity in BST stacks has been studied by temperature dependent (300…400 K) current–voltage characteristics. Lower leakage currents of BST/α-Al2O3 thin films were achieved compared with that of BST/GGG thin films, especially in the high field region. The conduction mechanism of the deposited films is found to be of Schottky emission type for a wide range of applied fields on both substrates. Schottky barrier height, effective Richardson constant, effective mass of conduction electrons in dielectric, and dynamic dielectric constant within the bounds of thermionic emission theory were found.
Авторы: V.V.Plotnikov, P.Yu.Beliavskiy
Направление: Проектирование и технология радиоэлектронных средств
Ключевые слова: Transport Phenomenon, Dielectric, Conduction Mechanisms, Schottky Emission
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